- 您现在的位置：买卖IC网 > PDF目录378597 > DXT2907A (DC Components Co., Ltd.) TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR PDF资料下载
参数资料
| 型号： | DXT2907A |
| 厂商： | DC Components Co., Ltd. |
| 英文描述： | TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 技术参数的PNP外延平面晶体管 |
| 文件页数： | 1/1页 |
| 文件大小： | 99K |
| 代理商： | DXT2907A |
DXT2907A
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Pinning
1 = Base
2 = Collector
3 = Emitter
Description
Designed for general purpose amplifier and high
-speed, medium-power switching applications.
SOT-89
Dimensions in inches and (millimeters)
.063(1.60)
.055(1.40)
.066(1.70)
.059(1.50)
.167(4.25)
.159(4.05)
.016(0.41)
.014(0.35)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.060(1.52)
.058(1.48)
.020(0.51)
.014(0.36)
.102(2.60)
.095(2.40)
1
2
3
Characteristic
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEX
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
f
T
C
ob
Min
-60
-60
-5
-
-
-
-
-
-
75
100
100
100
50
200
-
Typ
-
-
-
-
-
-0.2
-0.5
-
-
-
-
-
-
-
-
-
Max
-
-
-
-10
-50
-0.4
-1.6
-1.3
-2.6
-
-
-
300
-
-
8
Unit
V
V
V
nA
nA
mV
V
V
V
-
-
-
-
-
MHz
pF
Test Conditions
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
I
C
=-10
μ
A
I
C
=-10mA
I
E
=-10
μ
A
V
CB
=-50V
V
CE
=-30V, V
BE
=-0.5V
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
=-50mA
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
=-50mA
I
C
=-100
μ
A, V
CE
=-10V
I
C
=-1mA, V
CE
=-10V
I
C
=-10mA, V
CE
=-10V
I
C
=-150mA, V
CE
=-10V
I
C
=-500mA, V
CE
=-10V
V
CE
=-20V, f=100MHz, I
C
=-50mA
V
CB
=-10V, f=1MHz
Collector Cutoff Current
Collector-Emitter Saturation Voltage
(
1)
Base-Emitter Saturation Voltage
(1)
DC Current Gain
(1)
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
380
μ
s, Duty Cycle
2%
Electrical Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
-60
-60
-5
-600
1.2
+150
-55 to +150
Unit
V
V
V
mA
W
o
C
o
C
Absolute Maximum Ratings
(T
A
=25
o
C)
相关PDF资料 |
PDF描述 |
|---|---|
| DXT3904 | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR |
| DXT3906 | TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR |
| DXT5401 | TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR |
| DXT5551 | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR |
| DXTA13 | TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DXT2907A-13 | 功能描述:两极晶体管 - BJT 1000mW -60Vceo RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| DXT3150 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:NPN SURFACE MOUNT TRANSISTOR |
| DXT3150-13 | 功能描述:两极晶体管 - BJT 1000mW 25Vceo RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| DXT3832.768 | 制造商:Alpha 3 Manufacturing 功能描述: |
| DXT3832.768-SLA15 | 制造商:Alpha 3 Manufacturing 功能描述: |
发布紧急采购，3分钟左右您将得到回复。