元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
BTS121A E3045A | Infineon Technologies | MOSFET N CH 100V 22A TO-220AB | 0 | 1:$10.15000 10:$9.19200 25:$8.42560 100:$7.65980 250:$6.89384 500:$6.31934 |
BTS121A E3045A | Infineon Technologies | MOSFET N CH 100V 22A TO-220AB | 0 | 1:$10.15000 10:$9.19200 25:$8.42560 100:$7.65980 250:$6.89384 500:$6.31934 |
IPB049N06L3 G | Infineon Technologies | MOSFET N-CH 60V 80A TO263-3 | 0 | 1:$2.04000 10:$1.75100 25:$1.57560 100:$1.42960 250:$1.28372 500:$1.10866 |
IPB049N06L3 G | Infineon Technologies | MOSFET N-CH 60V 80A TO263-3 | 0 | 1,000:$0.84608 2,000:$0.78773 5,000:$0.75855 10,000:$0.72938 25,000:$0.71479 50,000:$0.70020 |
IPB054N06N3 G | Infineon Technologies | MOSFET N-CH 60V 80A TO263-3 | 2,000 | 1:$1.99000 10:$1.70900 25:$1.53840 100:$1.39600 250:$1.25356 500:$1.08262 |
IPB65R190CFD | Infineon Technologies | MOSFET N-CH 650V 17.5A TO263 | 0 | 1:$5.58000 10:$5.02000 25:$4.55560 100:$4.09070 250:$3.71880 500:$3.25396 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | MOSFET N 通道,金属氧化物 |
FET 特点: | 逻辑电平门 |
漏极至源极电压(Vdss): | 100V |
电流 - 连续漏极(Id) @ 25° C: | 22A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 100 毫欧 @ 9.5A,4.5V |
Id 时的 Vgs(th)(最大): | 2.5V @ 1mA |
闸电荷(Qg) @ Vgs: | - |
输入电容 (Ciss) @ Vds: | 1500pF @ 25V |
功率 - 最大: | 95W |
安装类型: | * |
封装/外壳: | * |
供应商设备封装: | * |
包装: | * |