| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| BSS192PE6327T | Infineon Technologies | MOSFET P-CH 250V 190MA SOT-89 | 0 | |
| BSS192PE6327T | Infineon Technologies | MOSFET P-CH 250V 190MA SOT-89 | 0 | |
| BSP317PE6327T | Infineon Technologies | MOSFET P-CH 250V 430MA SOT223 | 0 | |
| BSP317PE6327T | Infineon Technologies | MOSFET P-CH 250V 430MA SOT223 | 0 | |
| BSP316PE6327T | Infineon Technologies | MOSFET P-CH 100V 680MA SOT223 | 0 | |
| BSP316PE6327T | Infineon Technologies | MOSFET P-CH 100V 680MA SOT223 | 0 | |
| BSP295E6327T | Infineon Technologies | MOSFET N-CH 60V 1.8A SOT223 | 0 | 1:$0.94000 10:$0.75500 100:$0.56620 1,000:$0.32504 |
| BSP295E6327T | Infineon Technologies | MOSFET N-CH 60V 1.8A SOT223 | 0 | 1,000:$0.32504 5,000:$0.29358 10,000:$0.28834 |
| BSP171PE6327T | Infineon Technologies | MOSFET P-CH 60V 1.9A SOT223 | 0 | |
| BSP171PE6327T | Infineon Technologies | MOSFET P-CH 60V 1.9A SOT223 | 0 | |
| BSP170PE6327T | Infineon Technologies | MOSFET P-CH 60V 1.9A SOT223 | 0 | |
| BSP170PE6327T | Infineon Technologies | MOSFET P-CH 60V 1.9A SOT223 | 0 | |
| BSP129E6327T | Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 | 0 | |
| BSP129E6327T | Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 | 0 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET P 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 250V |
| 电流 - 连续漏极(Id) @ 25° C: | 190mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 12 欧姆 @ 190mA，10V |
| Id 时的 Vgs(th)（最大）: | 2V @ 130µA |
| 闸电荷(Qg) @ Vgs: | 6.1nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 104pF @ 25V |
| 功率 - 最大: | 1W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | TO-243AA |
| 供应商设备封装: | PG-SOT89-4 |
| 包装: | 剪切带 (CT) |