| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SI7804DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1212-8 | 0 | 3,000:$0.30450 |
| SI4493DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 10A 8SOIC | 0 | 2,500:$1.10700 |
| SI4401DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 8-SOIC | 0 | 2,500:$1.09755 |
| SIR882ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 60A POWERPAK | 0 | 1:$2.84000 25:$2.18720 100:$1.98450 250:$1.78200 500:$1.53900 1,000:$1.29600 |
| SIR882ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 60A POWERPAK | 0 | 1:$2.84000 25:$2.18720 100:$1.98450 250:$1.78200 500:$1.53900 1,000:$1.29600 |
| SIR882ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 60A POWERPAK | 0 | 3,000:$1.09350 6,000:$1.05300 15,000:$1.01250 30,000:$0.99225 75,000:$0.97200 |
| SIE882DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 25V POLARPAK | 0 | 3,000:$1.09350 |
| IRL640STRRPBF | Vishay Siliconix | MOSFET N-CH 200V 17A D2PAK | 0 | 800:$1.09305 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 30V |
| 电流 - 连续漏极(Id) @ 25° C: | 6.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 18.5 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）: | 1.8V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 13nC @ 5V |
| 输入电容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.5W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | PowerPAK? 1212-8 |
| 供应商设备封装: | PowerPAK? 1212-8 |
| 包装: | 带卷 (TR) |