| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SIA448DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V D-S SC70-6L | 0 | 3,000:$0.20150 6,000:$0.18850 15,000:$0.17550 30,000:$0.16575 75,000:$0.16250 150,000:$0.15600 |
| SIB455EDK-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 12V SC-75-6 | 240 | 1:$0.68000 25:$0.47760 100:$0.40920 250:$0.35340 500:$0.30380 1,000:$0.23560 |
| SIB455EDK-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 12V SC-75-6 | 0 | 3,000:$0.19220 6,000:$0.17980 15,000:$0.16740 30,000:$0.15810 75,000:$0.15500 150,000:$0.14880 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 20V |
| 电流 - 连续漏极(Id) @ 25° C: | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 15 毫欧 @ 12.4A，4.5V |
| Id 时的 Vgs(th)（最大）: | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 35nC @ 8V |
| 输入电容 (Ciss) @ Vds: | 1380pF @ 1V |
| 功率 - 最大: | 19.2W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | PowerPAK? SC-70-6 |
| 供应商设备封装: | PowerPAK? SC-70-6 单 |
| 包装: | 带卷 (TR) |