元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
BSH108,215 | NXP Semiconductors | MOSFET N-CH 30V 1.9A SOT23 | 11,488 | 1:$0.62000 10:$0.52200 25:$0.45760 100:$0.39180 250:$0.33984 500:$0.28784 1,000:$0.22190 |
BSH203,215 | NXP Semiconductors | MOSFET P-CH 30V 470MA SOT23 | 9,464 | 1:$0.50000 10:$0.39400 25:$0.33240 100:$0.27080 250:$0.22424 500:$0.18526 1,000:$0.13875 |
BSH103,215 | NXP Semiconductors | MOSFET N-CH 30V 0.85A SOT23 | 24,679 | 1:$0.54000 10:$0.37900 25:$0.31120 100:$0.24870 250:$0.18116 500:$0.14714 1,000:$0.11309 |
BSH108,215 | NXP Semiconductors | MOSFET N-CH 30V 1.9A SOT23 | 9,000 | 3,000:$0.19700 6,000:$0.18400 15,000:$0.17100 30,000:$0.16200 75,000:$0.15900 150,000:$0.15200 |
BSH103,215 | NXP Semiconductors | MOSFET N-CH 30V 0.85A SOT23 | 24,000 | 3,000:$0.09900 6,000:$0.09300 15,000:$0.08500 30,000:$0.08000 75,000:$0.07100 150,000:$0.06900 |
BSH103,235 | NXP Semiconductors | MOSFET N-CH 30V 0.85A SOT23 | 0 | 20,000:$0.09200 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | MOSFET N 通道,金属氧化物 |
FET 特点: | 逻辑电平门 |
漏极至源极电压(Vdss): | 30V |
电流 - 连续漏极(Id) @ 25° C: | 1.9A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 120 毫欧 @ 1A,10V |
Id 时的 Vgs(th)(最大): | 2V @ 1mA |
闸电荷(Qg) @ Vgs: | 10nC @ 10V |
输入电容 (Ciss) @ Vds: | 190pF @ 10V |
功率 - 最大: | 830mW |
安装类型: | 表面贴装 |
封装/外壳: | TO-236-3,SC-59,SOT-23-3 |
供应商设备封装: | TO-236AB |
包装: | Digi-Reel® |