元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
DMN2015UFDE-7 | Diodes Inc | MOSF N CH 20V 10.5A U-DFN2020-6E | 5,960 | 1:$0.64000 10:$0.53600 25:$0.46920 100:$0.40170 250:$0.34840 500:$0.29510 1,000:$0.22750 |
DMN2015UFDE-7 | Diodes Inc | MOSF N CH 20V 10.5A U-DFN2020-6E | 5,960 | 1:$0.64000 10:$0.53600 25:$0.46920 100:$0.40170 250:$0.34840 500:$0.29510 1,000:$0.22750 |
DMN2013UFDE-7 | Diodes Inc | MOSF N CH 20V 10.5A U-DFN2020-6 | 5,765 | 1:$0.64000 10:$0.53600 25:$0.46920 100:$0.40170 250:$0.34840 500:$0.29510 1,000:$0.22750 |
DMN2013UFDE-7 | Diodes Inc | MOSF N CH 20V 10.5A U-DFN2020-6 | 5,765 | 1:$0.64000 10:$0.53600 25:$0.46920 100:$0.40170 250:$0.34840 500:$0.29510 1,000:$0.22750 |
DMN2013UFDE-7 | Diodes Inc | MOSF N CH 20V 10.5A U-DFN2020-6 | 3,000 | 3,000:$0.20150 6,000:$0.18850 15,000:$0.17550 30,000:$0.16640 75,000:$0.16250 150,000:$0.15600 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | MOSFET N 通道,金属氧化物 |
FET 特点: | 逻辑电平门 |
漏极至源极电压(Vdss): | 20V |
电流 - 连续漏极(Id) @ 25° C: | 10.5A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 11.6 毫欧 @ 8.5A,4.5V |
Id 时的 Vgs(th)(最大): | 1.1V @ 250µA |
闸电荷(Qg) @ Vgs: | 45.6nC @ 10V |
输入电容 (Ciss) @ Vds: | 1779pF @ 10V |
功率 - 最大: | 660mW |
安装类型: | 表面贴装 |
封装/外壳: | 6-UDFN |
供应商设备封装: | * |
包装: | Digi-Reel® |