| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| IPA045N10N3 G | Infineon Technologies | MOSFET N-CH 100V 64A TO220-FP | 496 | 1:$4.25000 10:$3.79100 25:$3.41200 100:$3.10880 250:$2.80552 500:$2.51740 1,000:$2.12310 2,500:$2.01694 5,000:$1.93354 |
| IPP65R310CFD | Infineon Technologies | MOSFET N-CH 650V 11.4A TO220 | 482 | 1:$4.18000 10:$3.73600 25:$3.36200 100:$3.06330 250:$2.76444 500:$2.48054 1,000:$2.09202 2,500:$1.98742 5,000:$1.90523 |
| IPB65R110CFD | Infineon Technologies | MOSFET N-CH 650V 31.2A TO263 | 1,552 | 1:$8.18000 10:$7.41200 25:$6.79440 100:$6.17660 250:$5.55896 500:$5.09570 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET N 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 100V |
| 电流 - 连续漏极(Id) @ 25° C: | 64A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 4.5 毫欧 @ 64A，10V |
| Id 时的 Vgs(th)（最大）: | 3.5V @ 150µA |
| 闸电荷(Qg) @ Vgs: | 117nC @ 10V |
| 输入电容 (Ciss) @ Vds: | 8410pF @ 50V |
| 功率 - 最大: | 39W |
| 安装类型: | 通孔 |
| 封装/外壳: | TO-220-3 整包 |
| 供应商设备封装: | PG-TO220-FP |
| 包装: | 管件 |