元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
SUD09P10-195-GE3 | Vishay Siliconix | MOSFET P-CH 100V DPAK | 8,610 | 1:$0.95000 25:$0.75000 100:$0.67500 250:$0.58752 500:$0.52500 1,000:$0.41250 |
SUD09P10-195-GE3 | Vishay Siliconix | MOSFET P-CH 100V DPAK | 8,000 | 2,000:$0.35000 6,000:$0.33250 10,000:$0.31875 50,000:$0.30000 |
SI4666DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 25V 8-SOIC | 3,384 | 1:$0.97000 25:$0.74800 100:$0.66000 250:$0.57200 500:$0.48400 1,000:$0.38500 |
SI4666DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 25V 8-SOIC | 3,384 | 1:$0.97000 25:$0.74800 100:$0.66000 250:$0.57200 500:$0.48400 1,000:$0.38500 |
SI4666DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 25V 8-SOIC | 2,500 | 2,500:$0.31900 5,000:$0.29700 12,500:$0.28600 25,000:$0.27500 62,500:$0.27060 125,000:$0.26400 |
SI4401DDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 8-SOIC | 15,157 | 1:$0.97000 25:$0.74800 100:$0.66000 250:$0.57200 500:$0.48400 1,000:$0.38500 |
SI4401DDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 8-SOIC | 15,157 | 1:$0.97000 25:$0.74800 100:$0.66000 250:$0.57200 500:$0.48400 1,000:$0.38500 |
SI4401DDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 8-SOIC | 15,000 | 2,500:$0.31900 5,000:$0.29700 12,500:$0.28600 25,000:$0.27500 62,500:$0.27060 125,000:$0.26400 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | MOSFET P 通道,金属氧化物 |
FET 特点: | 标准 |
漏极至源极电压(Vdss): | 100V |
电流 - 连续漏极(Id) @ 25° C: | 8.8A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 195 毫欧 @ 3.6A,10V |
Id 时的 Vgs(th)(最大): | 2.5V @ 250µA |
闸电荷(Qg) @ Vgs: | 34.8nC @ 10V |
输入电容 (Ciss) @ Vds: | 1055pF @ 50V |
功率 - 最大: | 2.5W |
安装类型: | 表面贴装 |
封装/外壳: | TO-252-3,DPak(2 引线+接片),SC-63 |
供应商设备封装: | TO-252,(D-Pak) |
包装: | 剪切带 (CT) |