元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
SI4666DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 25V 8-SOIC | 2,500 | 2,500:$0.31900 5,000:$0.29700 12,500:$0.28600 25,000:$0.27500 62,500:$0.27060 125,000:$0.26400 |
SI4401DDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 8-SOIC | 15,157 | 1:$0.97000 25:$0.74800 100:$0.66000 250:$0.57200 500:$0.48400 1,000:$0.38500 |
SI4401DDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 8-SOIC | 15,157 | 1:$0.97000 25:$0.74800 100:$0.66000 250:$0.57200 500:$0.48400 1,000:$0.38500 |
SI4401DDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 8-SOIC | 15,000 | 2,500:$0.31900 5,000:$0.29700 12,500:$0.28600 25,000:$0.27500 62,500:$0.27060 125,000:$0.26400 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | MOSFET N 通道,金属氧化物 |
FET 特点: | 逻辑电平门 |
漏极至源极电压(Vdss): | 25V |
电流 - 连续漏极(Id) @ 25° C: | 16.5A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 10 毫欧 @ 10A,10V |
Id 时的 Vgs(th)(最大): | 1.5V @ 250µA |
闸电荷(Qg) @ Vgs: | 34nC @ 10V |
输入电容 (Ciss) @ Vds: | 1145pF @ 10V |
功率 - 最大: | 5W |
安装类型: | 表面贴装 |
封装/外壳: | 8-SOIC(0.154",3.90mm 宽) |
供应商设备封装: | 8-SOICN |
包装: | 带卷 (TR) |