| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SI9433BDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 8-SOIC | 2,500 | 2,500:$0.27695 5,000:$0.25785 12,500:$0.24830 25,000:$0.23875 62,500:$0.23493 125,000:$0.22920 |
| SI3477DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 12V 6-TSOP | 3,837 | 1:$0.84000 25:$0.64600 100:$0.57000 250:$0.49400 500:$0.41800 1,000:$0.33250 |
| SI3477DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 12V 6-TSOP | 3,000 | 3,000:$0.27550 6,000:$0.25650 15,000:$0.24700 30,000:$0.23750 75,000:$0.23370 150,000:$0.22800 |
| SIA433EDJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V SC-70-6 | 5,927 | 1:$0.79000 25:$0.61200 100:$0.54000 250:$0.46800 500:$0.39600 1,000:$0.31500 |
| SIA433EDJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V SC-70-6 | 3,000 | 3,000:$0.26100 6,000:$0.24300 15,000:$0.23400 30,000:$0.22500 75,000:$0.22140 150,000:$0.21600 |
| SI5424DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1206-8 | 4,538 | 1:$0.71000 25:$0.55080 100:$0.48600 250:$0.42120 500:$0.35640 1,000:$0.28350 |
| SI5424DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1206-8 | 4,538 | 1:$0.71000 25:$0.55080 100:$0.48600 250:$0.42120 500:$0.35640 1,000:$0.28350 |
| SI5424DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1206-8 | 3,000 | 3,000:$0.25467 |
| SI1499DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V SC-70-6 | 8,442 | 1:$0.75000 25:$0.57800 100:$0.51000 250:$0.44200 500:$0.37400 1,000:$0.29750 |
| SI1499DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V SC-70-6 | 8,442 | 1:$0.75000 25:$0.57800 100:$0.51000 250:$0.44200 500:$0.37400 1,000:$0.29750 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | MOSFET P 通道，金属氧化物 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 20V |
| 电流 - 连续漏极(Id) @ 25° C: | 4.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 40 毫欧 @ 6.2A，4.5V |
| Id 时的 Vgs(th)（最大）: | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 14nC @ 4.5V |
| 输入电容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.3W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装: | 8-SOICN |
| 包装: | 带卷 (TR) |