元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
STB26NM60N | STMicroelectronics | MOSFET N-CH 600V 20A D2PAK | 1,000 | 1,000:$3.23400 2,000:$3.07230 5,000:$2.95680 10,000:$2.86440 25,000:$2.77200 |
STL18NM60N | STMicroelectronics | MOSFET N-CH 600V 6A POWERFLAT | 3,000 | 1:$3.92000 10:$3.50900 25:$3.15520 100:$2.86960 250:$2.59760 500:$2.32560 1,000:$1.95840 |
STP18N55M5 | STMicroelectronics | MOSFET N-CH 550V 13A TO220AB | 915 | 1:$3.22000 10:$2.87500 25:$2.58760 100:$2.35750 250:$2.12752 500:$1.90900 1,000:$1.61000 2,500:$1.52950 5,000:$1.47200 |
STL18NM60N | STMicroelectronics | MOSFET N-CH 600V 6A POWERFLAT | 0 | 3,000:$1.80880 6,000:$1.74080 15,000:$1.68640 30,000:$1.63200 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | MOSFET N 通道,金属氧化物 |
FET 特点: | 标准 |
漏极至源极电压(Vdss): | 600V |
电流 - 连续漏极(Id) @ 25° C: | 20A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 165 毫欧 @ 10A,10V |
Id 时的 Vgs(th)(最大): | 4V @ 250µA |
闸电荷(Qg) @ Vgs: | 60nC @ 10V |
输入电容 (Ciss) @ Vds: | 1800pF @ 50V |
功率 - 最大: | 140W |
安装类型: | 表面贴装 |
封装/外壳: | TO-263-3,D²Pak(2 引线+接片),TO-263AB |
供应商设备封装: | D2PAK |
包装: | 带卷 (TR) |