半导体模块 APTM100A18FTG品牌、价格、PDF参数

APTM100A18FTG • 品牌、价格
元器件型号 厂商 描述 数量 价格
APTM100A18FTG Microsemi Power Products Group MOSFET 2 N CH 1000V 43A SP4 10 1:$145.48000
10:$135.94300
100:$126.88010
250:$122.82568
500:$120.44074
1,000:$114.47832
APTC60HM70SCTG Microsemi Power Products Group MOSFET 4N CH 600V 39A SP4 10 1:$189.20000
10:$179.41100
100:$169.62450
250:$166.36252
500:$163.10050
1,000:$156.57648
APTM20UM03FAG Microsemi Power Products Group POWER MOD MOSFET 200V 580A SP6 8 1:$235.42000
10:$223.24300
100:$211.06660
250:$207.00760
500:$202.94862
1,000:$194.83068
APTM100H45SCTG Microsemi Power Products Group MOSFET 4N CH 1000V 18A SP4 10 1:$259.29000
10:$245.87500
100:$232.46380
250:$227.99332
500:$223.52288
1,000:$214.58196
APTM100AM90FG Microsemi Power Products Group MOSFET 2 N CH 1000V 78A SP6 10 1:$272.98000
10:$258.86200
100:$244.74240
250:$240.03584
500:$235.32926
1,000:$225.91608
APTM100UM45DAG Microsemi Power Products Group MOSFET PWR MOD 1000V 215A SP6 10 1:$352.44000
10:$334.20700
100:$315.97720
250:$309.90072
500:$303.82426
1,000:$291.67128
APTJC120AM13VCT1AG Microsemi Power Products Group MOSFET SIC PHASE LEG MODULE 16 1:$955.86000
10:$937.47700
100:$900.71290
250:$882.33096
APTM100A18FTG • PDF参数
类别: 半导体模块
FET 型: 2 N 沟道(半桥)
FET 特点: 标准
漏极至源极电压(Vdss): 1000V(1kV)
电流 - 连续漏极(Id) @ 25° C: 43A
开态Rds(最大)@ Id, Vgs @ 25° C: 210 毫欧 @ 21.5A,10V
Id 时的 Vgs(th)(最大): 5V @ 5mA
闸电荷(Qg) @ Vgs: 372nC @ 10V
输入电容 (Ciss) @ Vds: 10400pF @ 25V
功率 - 最大: 780W
安装类型: 底座安装
封装/外壳: SP4
供应商设备封装: SP4
包装: 散装