元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
APTM100H45SCTG | Microsemi Power Products Group | MOSFET 4N CH 1000V 18A SP4 | 10 | 1:$259.29000 10:$245.87500 100:$232.46380 250:$227.99332 500:$223.52288 1,000:$214.58196 |
APTM100AM90FG | Microsemi Power Products Group | MOSFET 2 N CH 1000V 78A SP6 | 10 | 1:$272.98000 10:$258.86200 100:$244.74240 250:$240.03584 500:$235.32926 1,000:$225.91608 |
APTM100UM45DAG | Microsemi Power Products Group | MOSFET PWR MOD 1000V 215A SP6 | 10 | 1:$352.44000 10:$334.20700 100:$315.97720 250:$309.90072 500:$303.82426 1,000:$291.67128 |
APTJC120AM13VCT1AG | Microsemi Power Products Group | MOSFET SIC PHASE LEG MODULE | 16 | 1:$955.86000 10:$937.47700 100:$900.71290 250:$882.33096 |
类别: | 半导体模块 |
---|---|
FET 型: | 4 N 通道(半桥) |
FET 特点: | 标准 |
漏极至源极电压(Vdss): | 1000V(1kV) |
电流 - 连续漏极(Id) @ 25° C: | 18A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 540 毫欧 @ 9A,10V |
Id 时的 Vgs(th)(最大): | 5V @ 2.5mA |
闸电荷(Qg) @ Vgs: | 154nC @ 10V |
输入电容 (Ciss) @ Vds: | 4350pF @ 25V |
功率 - 最大: | 357W |
安装类型: | 底座安装 |
封装/外壳: | SP4 |
供应商设备封装: | SP4 |
包装: | 散装 |