元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
SI4808DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH/SCHOTTKY 30V 8SOIC | 0 | 2,500:$0.82350 |
SI4542DY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V 8-SOIC | 0 | 2,500:$0.79110 |
SI4966DY-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 20V 8SOIC | 0 | 2,500:$0.77625 |
SQJ941EP-T1-GE3 | Vishay Siliconix | MOSFET DUAL P-CH 30V PPAK 8SOIC | 0 | 3,000:$0.76950 |
SI4388DY-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH 30V 8-SOIC | 0 | 2,500:$0.76950 |
SI6975DQ-T1-GE3 | Vishay Siliconix | MOSFET P-CH DUAL G-S 12V 8TSSOP | 0 | 3,000:$0.74250 |
SI6973DQ-T1-GE3 | Vishay Siliconix | MOSFET P-CH DUAL G-S 20V 8TSSOP | 0 | 3,000:$0.74250 |
SI4814BDY-T1-GE3 | Vishay Siliconix | MOSFET N-CH/SCHOTTKY 30V 8SOIC | 0 | 2,500:$0.71550 |
SI4967DY-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 12V 8SOIC | 0 | 2,500:$0.71145 |
SI4965DY-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 8V 8SOIC | 0 | 2,500:$0.69390 |
SI7980DP-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 20V 8A PPAK 8SOIC | 0 | 3,000:$0.68850 |
SI4944DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH DUAL 30V 8-SOIC | 0 | 2,500:$0.67905 |
SI4569DY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 40V 8-SOIC | 0 | 2,500:$0.67905 |
SI7904DN-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH D-S 20V 1212-8 | 0 | 3,000:$0.67200 |
SI7214DN-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH D-S 30V 1212-8 | 0 | 3,000:$0.67200 |
SI7228DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V PWRPAK 1212-8 | 0 | 3,000:$0.61600 |
SIZ720DT-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V POWERPAIR | 0 | 3,000:$0.60900 |
SIZ710DT-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V POWERPAIR | 5 | 1:$1.63000 25:$1.29000 100:$1.16100 250:$1.01052 500:$0.90300 1,000:$0.70950 |
SIZ710DT-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V POWERPAIR | 5 | 1:$1.63000 25:$1.29000 100:$1.16100 250:$1.01052 500:$0.90300 1,000:$0.70950 |
类别: | 分离式半导体产品 |
---|---|
FET 型: | 2 个 N 沟道(双) |
FET 特点: | 逻辑电平门 |
漏极至源极电压(Vdss): | 30V |
电流 - 连续漏极(Id) @ 25° C: | 5.7A |
开态Rds(最大)@ Id, Vgs @ 25° C: | 22 毫欧 @ 7.5A,10V |
Id 时的 Vgs(th)(最大): | 800mV @ 250µA |
闸电荷(Qg) @ Vgs: | 20nC @ 10V |
输入电容 (Ciss) @ Vds: | - |
功率 - 最大: | 1.1W |
安装类型: | 表面贴装 |
封装/外壳: | 8-SOIC(0.154",3.90mm 宽) |
供应商设备封装: | 8-SOICN |
包装: | 带卷 (TR) |