| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SI4947ADY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 8-SOIC | 65 | 1:$1.00000 25:$0.77200 100:$0.68100 250:$0.59020 500:$0.49940 1,000:$0.39725 |
| SI4947ADY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 8-SOIC | 0 | 2,500:$0.32915 5,000:$0.30645 12,500:$0.29510 25,000:$0.28375 62,500:$0.27921 125,000:$0.27240 |
| SI4953ADY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 8-SOIC | 11 | 1:$0.95000 25:$0.73120 100:$0.64500 250:$0.55900 500:$0.47300 1,000:$0.37625 |
| SI4953ADY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 8-SOIC | 11 | 1:$0.95000 25:$0.73120 100:$0.64500 250:$0.55900 500:$0.47300 1,000:$0.37625 |
| SI4953ADY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 8-SOIC | 0 | 2,500:$0.31175 5,000:$0.29025 12,500:$0.27950 25,000:$0.26875 62,500:$0.26445 125,000:$0.25800 |
| SI4532ADY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V 8-SOIC | 0 | 2,500:$0.29580 |
| SI9936BDY-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH 30V 4.5A 8-SOIC | 0 | 2,500:$0.28710 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | 2 个 P 沟道（双） |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 30V |
| 电流 - 连续漏极(Id) @ 25° C: | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 80 毫欧 @ 3.9A，10V |
| Id 时的 Vgs(th)（最大）: | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 8nC @ 5V |
| 输入电容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.2W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装: | 8-SOICN |
| 包装: | 剪切带 (CT) |