| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SI1551DL-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V SC70-6 | 0 | 3,000:$0.18600 6,000:$0.17400 15,000:$0.16200 30,000:$0.15300 75,000:$0.15000 150,000:$0.14400 |
| SI3932DV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 6-TSOP | 1,901 | 1:$0.66000 25:$0.51000 100:$0.45000 250:$0.39000 500:$0.33000 1,000:$0.26250 |
| SI3932DV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 6-TSOP | 1,901 | 1:$0.66000 25:$0.51000 100:$0.45000 250:$0.39000 500:$0.33000 1,000:$0.26250 |
| SI4511DY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH D-S 20V 8-SOIC | 2,500 | 2,500:$0.67200 5,000:$0.63840 12,500:$0.61200 25,000:$0.59520 62,500:$0.57600 |
| SI7913DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 1212-8 PPAK | 14,229 | 1:$1.86000 25:$1.43120 100:$1.29850 250:$1.16600 500:$1.00700 1,000:$0.84800 |
| SI7913DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 1212-8 PPAK | 14,229 | 1:$1.86000 25:$1.43120 100:$1.29850 250:$1.16600 500:$1.00700 1,000:$0.84800 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | N 和 P 沟道 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 20V |
| 电流 - 连续漏极(Id) @ 25° C: | 290mA，410mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 1.9 欧姆 @ 290mA，4.5V |
| Id 时的 Vgs(th)（最大）: | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs: | 1.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 270mW |
| 安装类型: | 表面贴装 |
| 封装/外壳: | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装: | SC-70-6 |
| 包装: | 带卷 (TR) |