| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| SH8M41TB1 | Rohm Semiconductor | MOSFET N/P-CH 80V SOP8 | 6,663 | 1:$1.41000 25:$1.11600 100:$1.00440 250:$0.87420 500:$0.78120 1,000:$0.61380 |
| SH8M41TB1 | Rohm Semiconductor | MOSFET N/P-CH 80V SOP8 | 6,663 | 1:$1.41000 25:$1.11600 100:$1.00440 250:$0.87420 500:$0.78120 1,000:$0.61380 |
| SP8M51TB1 | Rohm Semiconductor | MOSFET N/P-CH 100V SOP8 | 2,500 | 2,500:$0.60200 5,000:$0.57190 10,000:$0.54825 25,000:$0.53320 |
| SH8K4TB1 | Rohm Semiconductor | MOSFET N-CH DUAL 30V 9A SOP8 | 3,349 | 1:$1.68000 25:$1.32320 100:$1.19070 250:$1.03636 500:$0.92610 1,000:$0.72765 |
| SH8K4TB1 | Rohm Semiconductor | MOSFET N-CH DUAL 30V 9A SOP8 | 3,349 | 1:$1.68000 25:$1.32320 100:$1.19070 250:$1.03636 500:$0.92610 1,000:$0.72765 |
| SH8M5TB1 | Rohm Semiconductor | MOSFET N/P-CH 30V SOP8 | 4,878 | 1:$1.77000 25:$1.39800 100:$1.25820 250:$1.09512 500:$0.97860 1,000:$0.76890 |
| SH8M4TB1 | Rohm Semiconductor | MOSFET N+P 30V 9A/7A 8-SOIC | 0 |
| 类别: | 分离式半导体产品 |
|---|---|
| FET 型: | N 和 P 沟道 |
| FET 特点: | 逻辑电平门 |
| 漏极至源极电压(Vdss): | 80V |
| 电流 - 连续漏极(Id) @ 25° C: | 3.4A，2.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C: | 130 毫欧 @ 3.4A，10V |
| Id 时的 Vgs(th)（最大）: | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs: | 9.2nC @ 5V |
| 输入电容 (Ciss) @ Vds: | 600pF @ 10V |
| 功率 - 最大: | 2W |
| 安装类型: | 表面贴装 |
| 封装/外壳: | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装: | 8-SOP |
| 包装: | 剪切带 (CT) |