参数资料
型号: E28F004BX-T120
厂商: INTEL CORP
元件分类: PROM
英文描述: OSC 5V SMT PLAS 14X9 CMOS
中文描述: 512K X 8 FLASH 12V PROM, 120 ns, PDSO40
封装: 20 X 10 MM, TSOP-40
文件页数: 17/50页
文件大小: 449K
代理商: E28F004BX-T120
28F400BX-TB 28F004BX-TB
During Erase Suspend mode the chip can go into a
pseudo-standby mode by taking CE
to VIH and the
active current is now a maximum of 10 mA If the
chip is enabled while in this mode by taking CE
to
VIL the Erase Resume command can be issued to
resume the erase operation
Upon completion of reads from any block other than
the block being erased the Erase Resume com-
mand must be issued When the Erase Resume
command is given the WSM will continue with the
erase sequence and complete erasing the block As
with the end of erase the status register must be
read cleared and the next instruction issued in or-
der to continue
446 EXTENDED CYCLING
Intel has designed extended cycling capability into
its ETOX III flash memory technology The 4-Mbit
boot block flash family is designed for 100000 pro-
gramerase cycles on each of the seven blocks The
combination of low electric fields clean oxide pro-
cessing and minimized oxide area per memory cell
subjected to the tunneling electric field results in
very high cycling capability
24
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相关代理商/技术参数
参数描述
E28F004BXT60 制造商:INTEL 功能描述:*
E28F004BX-T60 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
E28F004BX-T70 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM
E28F004BX-T80 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
E28F004S3-120 制造商:Intel 功能描述:NOR Flash, 512K x 8, 40 Pin, Plastic, TSSOP