参数资料
型号: E28F004BX-T120
厂商: INTEL CORP
元件分类: PROM
英文描述: OSC 5V SMT PLAS 14X9 CMOS
中文描述: 512K X 8 FLASH 12V PROM, 120 ns, PDSO40
封装: 20 X 10 MM, TSOP-40
文件页数: 5/50页
文件大小: 449K
代理商: E28F004BX-T120
28F400BX-TB 28F004BX-TB
2122 28F400BX-T Memory Map
The 28F400BX-T device has the 16-Kbyte boot
block located from 3E000H to 3FFFFH to accom-
modate those microprocessors that boot from the
top of the address map In the 28F400BX-T the first
8-Kbyte parameter block resides in memory space
from 3D000H to 3DFFFH The second 8-Kbyte pa-
rameter block resides in memory space from
3C000H to 3CFFFH The 96-Kbyte main block re-
sides in memory space from 30000H to 3BFFFH
The three 128-Kbyte main blocks reside in memory
space from 20000H to 2FFFFH 10000H to 1FFFFH
and 00000H to 0FFFFH as shown below in Figure 8
(Word Addresses)
3FFFFH
16-Kbyte BOOT BLOCK
3DFFFH
3E000H
8-Kbyte PARAMETER BLOCK
3CFFFH
3D000H
8-Kbyte PARAMETER BLOCK
3BFFFH
3C000H
96-Kbyte MAIN BLOCK
2FFFFH
30000H
128-Kbyte MAIN BLOCK
1FFFFH
20000H
128-Kbyte MAIN BLOCK
0FFFFH
10000H
128-Kbyte MAIN BLOCK
00000H
Figure 8 28F400BX-T Memory Map
13
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