参数资料
型号: EDI88512CA
英文描述: 512Kx8 Monolithic SRAM(512Kx8 CMOS单片静态RAM)
中文描述: 512Kx8单片的SRAM(512Kx8的CMOS单片静态内存)
文件页数: 3/9页
文件大小: 181K
代理商: EDI88512CA
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
EDI88512CA
AC CHARACTERISTICS – READ CYCLE
(VCC = 5.0V, VSS = 0V, TA = -55
°C to +125°C)
Symbol
15ns
17ns
20ns
25ns
35ns
45ns
55ns
Parameter
JEDEC
Alt.
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Units
Read Cycle Time
tAVAV
tRC
15
17
20
25
35
45
55
ns
Address Access Time
tAVQV
tAA
15
17
20
25
35
45
55
ns
Chip Enable Access Time
tELQV
tACS
15
17
20
25
35
45
55
ns
Chip Enable to Output in Low Z (1)
tELQX
tCLZ
2
3
33
3
ns
Chip Disable to Output in High Z (1)
tEHQZ
tCHZ
0
7
07
08
0
10
0
15
0
20
0
20
ns
Output Hold from Address Change
tAVQX
tOH
0
00
0
ns
Output Enable to Output Valid
tGLQV
tOE
8
10
12
15
25
30
ns
Output Enable to Output in Low Z (1)
tGLQX
tOLZ
0
00
0
ns
Output Disable to Output in High Z(1)
tGHQZ
tOHZ
0
7
07
08
0
10
0
15
0
20
0
20
ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS – WRITE CYCLE
(VCC = 5.0V, VSS = 0V, TA = -55
°C to +125°C)
Symbol
15ns
17ns
20ns
25ns
35ns
45ns
55ns
Parameter
JEDEC
Alt.
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Units
Write Cycle Time
tAVAV
tWC
15
17
20
25
35
45
55
ns
Chip Enable to End of Write
tELWH
tCW
13
14
15
17
25
30
50
ns
tELEH
tCW
13
14
15
17
25
30
50
ns
Address Setup Time
tAVWL
tAS
00
0
ns
tAVEL
tAS
00
0
ns
Address Valid to End of Write
tAVWH
tAW
13
14
15
17
25
30
50
ns
tAVEH
tAW
13
14
15
17
25
30
50
ns
Write Pulse Width
tWLWH
tWP
13
14
15
17
25
30
45
ns
tWLEH
tWP
13
14
15
17
25
30
45
ns
Write Recovery Time
tWHAX
tWR
00
0
ns
tEHAX
tWR
00
0
ns
Data Hold Time
tWHDX
tDH
00
0
ns
tEHDX
tDH
00
0
ns
Write to Output in High Z (1)
tWLQZ
tWHZ
0808
0
8
0
10
0
25
0
30
0
30
ns
Data to Write Time
tDVWH
tDW
8
10
12
20
25
40
ns
tDVEH
tDW
8
10
12
20
25
30
ns
Output Active from End of Write (1)
tWHQX
tWLZ
00
0
ns
1. This parameter is guaranteed by design but not tested.
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