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参数资料
| 型号： | EDI8C32512CA |
| 英文描述： | 512Kx32 SRAM Module(低功耗CMOS，128Kx32静态RAM模块（存取时间15，17，20，25，35，45，55ns）) |
| 中文描述： | 512Kx32 SRAM的模块（低功耗的CMOS，128Kx32静态内存模块（存取时间15,17,20,25,35,45,55纳秒）） |
| 文件页数： | 3/9页 |
| 文件大小： | 188K |
| 代理商： | EDI8C32512CA |
3
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WS512K32-XXX /
EDI8C32512CA
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
Vcc+0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
TRUTH TABLE
RECOMMENDED OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
Operating Temp (Mil)
TA
-55
+125
°C
CAPACITANCE
(TA = +25
°C)
Parameter
Symbol
Conditions
Max
Unit
OE capacitance
COE
VIN = 0 V, f = 1.0 MHz
50
pF
WE1-4 capacitance
CWE
VIN = 0 V, f = 1.0 MHz
pF
HIP (PGA)
20
CQFP G4T
50
CQFP G2T/E
20
CS1-4 capacitance
CCS
VIN = 0 V, f = 1.0 MHz
20
pF
Data I/O capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz
20
pF
Address input capacitance
CAD
VIN = 0 V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
Parameter
Symbol
Conditions
Units
Min
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
10
A
Operating Supply Current x 32 Mode
ICC x 32
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
540
mA
Standby Current
ISB
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
80
mA
Output Low Voltage
VOL
IOL = 8mA for 15 - 35ns,
0.4
V
IOL = 2.1mA for 45 - 55ns, Vcc = 4.5
Output High Voltage
VOH
IOH = -4.0mA for 15 - 35ns,
2.4
V
IOH = -1.0mA for 45 - 55ns, Vcc = 4.5
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
DC CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55
°C to +125°C)
DATA RETENTION CHARACTERISTICS
(TA = -55
°C to +125°C)
Parameter
Symbol
Conditions
Units
Min
Typ
Max
Data Retention Supply Voltage
VDR
CS
≥ VCC -0.2V
2.0
5.5
V
Data Retention Current
ICCDR1
VCC = 3V
3.2
28*
mA
* Also available in Low Power version, please call factory for information.
CS
OE
WE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
H
Out Disable
High Z
Active
L
X
L
Write
Data In
Active
相关PDF资料 |
PDF描述 |
|---|---|
| EDI8C32512LPA20EC | Integrated Buffers with VCOM; Temperature Range: -40°C to 85°C; Package: 20-HTSSOP T&R |
| EDI8C32512LPA20EI | Integrated Buffers with VCOM; Temperature Range: -40°C to 85°C; Package: 24-HTSSOP |
| EDI8C32512LPA20EM | Integrated Buffers with VCOM; Temperature Range: -40°C to 85°C; Package: 24-HTSSOP T&R |
| EDI8C32512LPA25EC | x32 SRAM Module |
| EDI8C32512LPA25EI | x32 SRAM Module |
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