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参数资料
| 型号： | EDI8L21664V |
| 英文描述： | 2x64Kx16 SRAM(3.3V,2x64Kx16静态RAM) |
| 中文描述： | 2x64Kx16 SRAM的电压（3.3V，2x64Kx16静态内存） |
| 文件页数： | 3/6页 |
| 文件大小： | 60K |
| 代理商： | EDI8L21664V |
EDI8L21664V
2x64Kx16SRAM
3
EDI8L21664V Rev. 0 1/98 ECO #9704
Absolute Maximum Ratings*
Parameter
Sym
Conditions
Min
Max
Units
Power Supply
ICC1
Device Selected; all inputs
≤VIL or ≥VIH;
-10ns
380
mA
Current: Operating
cycle time
≥tKC MIN;
-12ns
360
VCC=MAX; outputs open
-15ns
260
CMOS Standby
ISB2
Device deselected; VCC=MAX; all inputs
≤ VSS +0.2
60
mA
or
≥ VCC -0.2; all inputs static; CLK frequency = 0
TTL Standby
ISB3
Device deselected; all inputs
≤VIL or ≥VIH;
120
mA
all inputs static; VCC=MAX; CLK frequency = 0
Input Leakage Current
ILI
0V
≤VIN≤VCC
-5
5
A
Output Leakage Current
ILO
Output(s) disabled, 0V
≤VOUT≤VCC
--5
5
A
Output High Voltage
VOH
IOH = -4.0mA
2.4
V
Output Low Voltage
VOL
IOL = 8.0mA
0.4
V
(f=1.0MHz, VIN=VCC or VSS)
Parameter
Sym
Max
Unit
Address Lines
CA
8
pF
Data Lines
CD/Q
17
pF
Control Lines
CC
15
pF
*Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions greater than those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Voltage on Vcc Supply Relative to Vss
-0.5V to 4.6V
VIN
-0.5V to Vcc+0.5V
Storage Temperature
-55°C to +125°C
Junction Temperature
+125°C
Power Dissipation
3 Watts
Short Circuit Output Current (per I/O)
50 mA
AC Test Conditions
Input Pulse Levels
VSS to 3.0V
Input Rise and Fall Times (Max)
1.5ns
Input and Output Timing Levels
1.5V
Output Load
See Figure 1
Recommended DC Operating Conditions
Description
Sym
Min
Max
Units
Input High Voltage
VIH
2.2
Vcc+0.5
V
Input Low Voltage
VIL
-0.3
0.8
V
Supply Voltage
Vcc
3.0
3.6
V
Capacitance
Figure 1
DC Electrical Characteristics
(f=1.0MHz, VIN=VCC or VSS)
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