参数资料
型号: EDL1216AASA-75
英文描述: Programmable VCOM; Temperature Range: -40°C to 85°C; Package: 12-DFN T&R
中文描述: 内存| 4X2MX16 |的CMOS | BGA封装| 54PIN |塑料
文件页数: 2/59页
文件大小: 489K
代理商: EDL1216AASA-75
EDL1216AASA
Data Sheet E0196E20 (Ver. 2.0)
10
Command Operation
Extended Mode register set command (/CS, /RAS, /CAS, /WE, BA0 = Low, BA1 = High)
The Mobile RAM has an extended mode register that defines low power functions. In this command, A0 through A11
are the data input pins.
After power on, the extended mode register set command must be executed to fix low power functions.
The extended mode register can be set only when all banks are in idle state.
During tRSC following this command, the Mobile RAM can not accept any other commands.
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Add
A10
BA0(A13)
BA1(A12)
Extended Mode register set command
Mode register set command (/CS, /RAS, /CAS, /WE, BA0, BA1 = Low)
The Mobile RAM has a mode register that defines how the device operates. In this command, A0 through A11 are
the data input pins. After power on, the mode register set command must be executed to initialize the device. The
mode register can be set only when all banks are in idle state. During tRSC following this command, the Mobile
RAM cannot accept any other commands.
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Add
A10
BA0(A13)
BA1(A12)
Mode register set command
Activate command (/CS, /RAS = Low, /CAS, /WE = High)
The Mobile RAM has four banks, each with 4,096 rows. This command activates the bank selected by BA0 (A13)
and BA1 (A12) and a row address selected by A0 through A11. This command corresponds to a conventional
DRAM's /RAS falling.
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Add
A10
BA0(A13), BA1(A12)
Row
Activate command
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