参数资料
型号: EE-SF5
厂商: Omron Electronics Inc-EMC Div
文件页数: 1/2页
文件大小: 0K
描述: SENSR OPTO TRANS 5MM REFL SOLDER
产品目录绘图: EE-SF5(-B)
Reflective Sensing
标准包装: 200
检测距离: 0.197"(5mm)
检测方法: 反射
电压 - 集电极发射极击穿(最大): 30V
电流 - 集电极 (Ic)(最大): 20mA
电流 - DC 正向(If): 50mA
输出类型: 光电晶体管
响应时间: 30µs,30µs
安装类型: 焊接
封装/外壳: PCB 安装
包装: 散装
工作温度: -25°C ~ 80°C
产品目录页面: 2785 (CN2011-ZH PDF)
其它名称: EESF5
OR502
Photomicrosensor (Reflective)
EE-SF5(-B)
Be sure to read Precautions on page 25.
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
Matted
■ Features
? Dust-tight construction.
? With a visible-light intercepting filter which allows objects to be
sensed without being greatly influenced by the light radiated from
fluorescent lamps.
? Mounted with M2 screws.
? Model with soldering terminals (EE-SF5).
1.9 dia.
2.2 ±0.2 dia.hole
? Model with PCB terminals (EE-SF5-B).
■ Absolute Maximum Ratings (Ta = 25 ° C)
Item
Symbol
Rated value
Four, 0.25
7.62 ± 0.3
Four,
1.5
2.54 ± 0.2
Four,
0.5
7.6 ± 1
2.54
Emitter
Detector
Forward current
Pulse forward cur-
rent
Reverse voltage
Collector–Emitter
I F
I FP
V R
V CEO
50 mA
(see note 1)
1A
(see note 2)
4V
30 V
EE-SF5
EE-SF5-B
voltage
Emitter–Collector
voltage
Collector current
V ECO
I C
---
20 mA
A
Internal Circuit
C
Unless otherwise specified, the
tolerances are as shown below.
Ambient tem-
perature
Collector dissipa-
tion
Operating
Storage
P C
Topr
Tstg
100 mW
(see note 1)
–25 ° C to 80 ° C
–30 ° C to 80 ° C
K
Terminal No.
A
K
C
E
E
Name
Anode
Cathode
Collector
Emitter
Dimensions
3 mm max.
3 < mm ≤ 6
6 < mm ≤ 10
10 < mm ≤ 18
18 < mm ≤ 30
Tolerance
± 0.3
± 0.375
± 0.45
± 0.55
± 0.65
Soldering temperature Tsol 260 ° C
(see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25 ° C.
2. The pulse width is 10 μ s maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25 ° C)
Item
Symbol
Value
Condition
Emitter
Detector
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
V F
I R
λ P
I L
I D
I LEAK
1.2 V typ., 1.5 V max.
0.01 μ A typ., 10 μ A max.
940 nm typ.
200 μ A min., 2,000 μ A max.
2 nA typ., 200 nA max.
2 μ A max.
I F = 30 mA
V R = 4 V
I F = 20 mA
I F = 20 mA, V CE = 10 V
White paper with a reflection ratio of
90%, d = 5 mm (see note)
V CE = 10 V, 0 l x
I F = 20 mA, V CE = 10 V with no reflec-
tion
Collector–Emitter saturated volt- V CE (sat)
age
---
---
Peak spectral sensitivity wave-
λ P
850 nm typ.
V CE = 10 V
length
Rising time
Falling time
tr
tf
30 μ s typ.
30 μ s typ.
V CC = 5 V, R L = 1 k Ω , I L = 1 mA
V CC = 5 V, R L = 1 k Ω , I L = 1 mA
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
168
EE-SF5(-B) Photomicrosensor (Reflective)
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EE-SF5B 制造商:omron 功能描述:
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