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参数资料
| 型号： | EE-SY124 |
| 厂商： | Omron Electronics Inc-EMC Div |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | SENSR OPTO TRANS 1MM REFL TH PCB |
| 产品变化通告： | EE-SY12x Discontinuation |
| 产品目录绘图： | EE-SY12(4,5) Reflective Sensing |
| 标准包装： | 50 |
| 检测距离： | 0.039"（1mm） |
| 检测方法： | 反射 |
| 电压 - 集电极发射极击穿（最大）： | 30V |
| 电流 - 集电极 (Ic)（最大）： | 20mA |
| 电流 - DC 正向(If)： | 50mA |
| 输出类型： | 光电晶体管 |
| 响应时间： | 35µs，25µs |
| 安装类型： | 通孔 |
| 封装/外壳： | PCB 安装 |
| 包装： | 散装 |
| 工作温度： | -25°C ~ 85°C |
| 其它名称： | EESY124 OR520 |
Photomicrosensor (Reflective)
EE-SY124
I Dimensions
Note: All units are in millimeters unless otherwise indicated.
I Features
? Ultra-compact model.
I Absolute Maximum Ratings (Ta = 25 ° C)
Item
Symbol
Rated value
Emitter
Forward current
Pulse forward
I F
I FP
50 mA (see note 1)
1 A (see note 2)
current
Reverse voltage
V R
4V
Detector
Collector–Emitter V CEO
voltage
Emitter–Collector V ECO
voltage
30 V
5V
Collector current
Collector
dissipation
I C
P C
20 mA
75 mW (see note 1)
Ambient
Operating
Topr
– 25 ° C to 85 ° C
temperature Storage
Soldering temperature
Tstg
Tsol
– 40 ° C to 100 ° C
260 ° C (see note 3)
K
A
Internal Circuit
C
E
Unless otherwise specified, the
tolerances are ± 0.15 mm.
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25 ° C.
2. The pulse width is 10 μ s maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Terminal No.
Name
I Ordering Information
A
K
C
E
Anode
Cathode
Collector
Emitter
Description
Photomicrosensor (reflective)
Model
EE-SY124
I Electrical and Optical Characteristics (Ta = 25 ° C)
Item
Symbol
Value
Condition
Emitter
Detector
Forward voltage
Reverse current
Peak emission wavelength
Light current
V F
I R
λ P
I L
1.2 V typ., 1.4 V max.
0.01 μ A typ., 10 μ A max.
950 nm typ.
50 μ A min., 300 μ A max.
I F = 20 mA
V R = 4 V
I F = 4 mA
I F = 4 mA, V CE = 2 V
Aluminum-deposited surface,
d = 1 mm (see note)
Dark current
Leakage current
Collector–Emitter saturated
I D
I LEAK
V CE (sat)
2 nA typ., 200 nA max.
200 nA max.
---
V CE = 10 V, 0 l x
I F =4 mA, V CE = 2 V with no reflection
---
voltage
Peak spectral sensitivity
λ P
930 nm typ.
V CE = 10 V
wavelength
Rising time
Falling time
tr
tf
35 μ s typ.
25 μ s typ.
V CC = 2 V, R L = 1 k ? , I L = 100 μ A
V CC = 2 V, R L = 1 k ? , I L = 100 μ A
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
296
Photomicrosensor (Reflective) EE-SY124
相关PDF资料 |
PDF描述 |
|---|---|
| EE-SY125 | OPTO SENSOR 1MM REFLECT SMD |
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| EE-SY169 | SENSR OPTO TRANS 4MM REFL TH PCB |
| EE-SY171 | SENSOR OPTO TRANS 3.5MM REFL PCB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| EESY125 | 制造商:Omron Electronic Components LLC 功能描述:OPTO SENSOR 1MM REFLECT SMD 制造商:Omron Electronic Components LLC 功能描述:OPTO SWITCH REFLECTIVE 1MM |
| EE-SY125 | 功能描述:光学开关（反射型，光电晶体管输出） REFL PHOTOTRANSISTOR RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel |
| EE-SY125 | 制造商:Omron Electronic Components LLC 功能描述:Optical Sensor (Switch) Reflective |
| EESY169 | 制造商:Omron Electronic Components LLC 功能描述:NON-AMPLIFIED SENSOR - Bulk 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Reflective Phototransistor 4-Pin |
| EE-SY169 | 功能描述:光学开关（反射型，光电晶体管输出） REFL CONV PHTOTRNSTR RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel |
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