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参数资料
| 型号： | EE-SY171 |
| 厂商： | Omron Electronics Inc-EMC Div |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | SENSOR OPTO TRANS 3.5MM REFL PCB |
| 标准包装： | 25 |
| 检测距离： | 0.138"（3.5mm） |
| 检测方法： | 反射 |
| 电压 - 集电极发射极击穿（最大）： | 30V |
| 电流 - 集电极 (Ic)（最大）： | 20mA |
| 电流 - DC 正向(If)： | 50mA |
| 输出类型： | 光电晶体管 |
| 响应时间： | 30µs，30µs |
| 安装类型： | 通孔 |
| 封装/外壳： | PCB 安装 |
| 包装： | 散装 |
| 工作温度： | -40°C ~ 85°C |
| 其它名称： | EE-SY171-ND EESY1168B EESY1588B EESY171 OR1036 |
Photomicrosensor (Reflective)
EE-SY171
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Features
? 3-mm-tall, thin model
? RoHS Compliant.
Two, 2 dia.
Two, 1.2 dia.
Anode mark
■ Absolute Maximum Ratings (Ta = 25 ° C)
Four, 0.5
Emitter
Item
Forward current
Symbol
I F
Rated value
50 mA (see note 1)
Pulse forward current I FP
1 A (see note 2)
Reverse voltage
V R
4V
Detector
Collector–Emitter
V CEO
30 V
voltage
Emitter–Collector
V ECO
---
0 ° to 30 °
Internal Cir c uit
Four, 0.25
Ambient
temperature
voltage
Collector current
Collector dissipation
Operating
Storage
I C
P C
T opr
T stg
20 mA
100 mW (see note 1)
–40 ° C to 85 ° C
–40 ° C to 85 ° C
A
C
Unless otherwise specified, the
tolerances are as shown below.
Soldering temperature
T sol
260 ° C (see note 3)
K
Terminal No.
A
K
C
E
E
Name
Anode
Cathode
Collector
Emitter
Dimensions
3 mm max.
3 < mm ≤ 6
6 < mm ≤ 10
10 < mm ≤ 18
18 < mm ≤ 30
Toleran c e
± 0.3
± 0.375
± 0.45
± 0.55
± 0.65
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25 ° C.
2. The pulse width is 10 μ s maximum with a frequency of 100 Hz.
3. Complete soldering within 10 seconds.
■ Ordering Information
Description Model
Photomicrosensor (reflective) EE-SY171
■ Electrical and Optical Characteristics (Ta = 25 ° C)
Item
Symbol
Value
Condition
Emitter
Detector
Forward voltage
Reverse current
Peak emission wavelength
Light current
V F
I R
λ P
I L
1.2 V typ., 1.5 V max.
0.01 μ A typ., 10 μ A max.
940 nm typ.
50 μ A min., 500 μ A max.
I F = 30 mA
V R = 4 V
I F = 20 mA
I F = 20 mA, V CE = 10 V
White paper with a reflection ratio of 90%,
d = 3.5 mm (see note)
Dark current
Leakage current
I D
I LEAK
2 nA typ., 200 nA max.
2 μ A max.
V CE = 10 V, 0 l x
I F = 20 mA, V CE = 10 V with no reflection
Collector–Emitter saturated voltage V CE (sat)
Peak spectral sensitivity wavelength λ P
---
850 nm typ.
---
V CE = 10 V
Rising time
Falling time
tr
tf
30 μ s typ.
30 μ s typ.
V CC = 5 V, R L = 1 k Ω , I L = 1 mA
V CC = 5 V, R L = 1 k Ω , I L = 1 mA
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
Photomicrosensor (Reflective)
EE-SY171
223
相关PDF资料 |
PDF描述 |
|---|---|
| EE-SY193 | SENSOR OPTO TRANS 1MM SMD |
| EE-SY199 | SENSOR OPTO TRANS 1MM REFL SMD |
| EE-SY201 | OPTO SENSOR REFLECT TYPE 4MM |
| EE-SY313 | OPTO SENSOR REFLECT 4.4MM |
| EE-SY410 | OPTO SENSOR 5MM REFLECT LIGHT-ON |
相关代理商/技术参数 |
参数描述 |
|---|---|
| EE-SY171 | 制造商:Omron Electronic Components LLC 功能描述:OPTO SWITCH REFLECTIVE |
| EESY190 | 制造商:Omron Electronic Components LLC 功能描述:OPTO SENSOR VERT REFLECT TYPE 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Transmissive Phototransistor 4-Pin |
| EE-SY190 | 功能描述:光学开关（反射型，光电晶体管输出） REFL PHOTOTRANSISTOR RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel |
| EESY190NC | 制造商:Omron Electronic Components LLC 功能描述:PHOTOINTERRUPTER TRANSMISSIVE PHOTOTRANSISTOR - Bulk |
| EESY191 | 制造商:Omron Corporation 功能描述:NON-AMPLIFIED SENSOR - Trays 制造商:Omron Corporation 功能描述:OPTO SENSOR HORZ REFLECT TYPE |
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