参数资料
型号: EE-SY199
厂商: Omron Electronics Inc-EMC Div
文件页数: 1/6页
文件大小: 0K
描述: SENSOR OPTO TRANS 1MM REFL SMD
产品目录绘图: Reflective Sensing
EE-SY199
标准包装: 1
检测距离: 0.039"(1mm)
检测方法: 反射
电压 - 集电极发射极击穿(最大): 35V
电流 - 集电极 (Ic)(最大): 20mA
电流 - DC 正向(If): 50mA
输出类型: 光电晶体管
响应时间: 20µs,20µs
安装类型: 表面贴装
封装/外壳: 1206(3216 公制)- 3.20mm L x 1.60mm W x 1.10mm H
包装: 标准包装
工作温度: -25°C ~ 85°C
产品目录页面: 2785 (CN2011-ZH PDF)
其它名称: Z3020DKR
Photomicrosensor (Reflective)
EE-SY199
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Features
? Ultra-compact model.
? PCB surface mounting type.
(0.7)
Center of recei v er element
? RoHS Compliant.
(0.55)
(0.7)
(0.65)
1.7
Recommended
solderin g pattern
1 1.7 1
■ Absolute Maximum Ratings (Ta = 25 ° C)
Item Symbol Rated value
2.7
3.2
(0.63)
Center of emitter element
Resin part of light shielding mod u le
0.45
0.65
0.65
Emitter
Detector
Forward current
Reverse voltage
Collector–Emitter
I F
V R
V CEO
50 mA (see note 1)
6V
35 V
0.4
1.1
Note 1. The shaded portion in the a b o v e
fig u re may ca u se shorting.
Do not w ire in this portion.
voltage
Emitter–Collector
voltage
V ECO
6V
E
(1.8)
K
(0.57)
2. The tolerance for the
recommended soldering pattern
is ± 0.1mm
Collector current
Collector dissipation
I C
P C
20 mA
75 mW (see note 1)
T opr
T stg
C
Direction pattern (NC)
Terminal No.
A
(0.57)
A
Name
Anode
C
E
Internal Circuit
A
K
Total Allowable Loss P TOT
Ambient Operating
temperature
Storage
Max. Reflow soldering T sol
100 mW (see note 1)
–25 ° C to 8 5 ° C
–40 ° C to 100 ° C
260 ° C (see note 2)
K
C
E
Cathode
Collector
Emitter
Unless other w ise specified, the
tolerances are ± 0.15 mm.
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25 ° C.
2. Complete soldering within 5 seconds. For reflow soldering,
use the conditions given in the Precautions section of this
datasheet.
■ Ordering Information
Description
Photomicrosensor (reflective)
■ Electrical and Optical Characteristics (Ta = 25 ° C)
Model
EE-SY199
Item
Symbol
Value
Condition
Emitter
Detector
Forward voltage
Reverse current
Peak emission wavelength
Light current
V F
I R
λ P
I L
1.2 V typ., 1.4 V max.
10 μ A max.
950 nm typ.
40 μ A min., 8 5 μ A typ.,
130 μ A max.
I F = 20 mA
V R = 6 V
---
Aluminum-deposited surface,
I F = 4 mA, V CE = 2 V, d = 1 mm
(see note)
Dark current
Leakage current
Collector–Emitter saturated
voltage
Peak spectral sensitivity
I D
I LEAK
V CE (sat)
λ P
1 nA typ., 100 nA max.
500 nA max.
---
930 nm typ.
V CE = 20 V, 0 l x
I F = 4 mA, V CE = 2 V, with no reflection
---
---
wavelength
Rising time
Falling time
tr
tf
20 μ s typ., 100 μ s max.
20 μ s typ., 100 μ s max.
V CC = 2 V, R L = 1 k Ω ,
I L = 100 μ A, d = 1 mm (see note)
V CC = 2 V, R L = 1 k Ω ,
I L = 100 μ A, d = 1 mm (see note)
Note: Refer to the “Light Current Measurement Setup Diagram” in the Engineering Data section of this datasheet, regarding distance “d”.
Photomicrosensor (Reflective)
EE-SY199
229
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EE-SY310 功能描述:光学开关(反射型,光电IC输出) REFL DARK-ON RoHS:否 制造商:Optek 输出设备:Open Collector, Inverter 感应距离:12.7 mm 最大工作温度:+ 85 C 最小工作温度:- 40 C 高电平输入电压:2.9 V 低电平输出电压:0.4 V 低电平输出电流:16 mA 封装: