参数资料
型号: EE-SY313
厂商: Omron Electronics Inc-EMC Div
文件页数: 1/3页
文件大小: 0K
描述: OPTO SENSOR REFLECT 4.4MM
标准包装: 200
检测距离: 0.173"(4.4mm)
检测方法: 反射
输出配置: 暗-开
安装类型: 通孔
电流 - 电源: 20mA
电源电压: 4.5 V ~ 16 V
封装/外壳: 6-DIP(0.600",15.24mm),5 引线
包装: 托盘
其它名称: EESY313
OR603
Photomicrosensor (Reflective)
EE-SY313/-SY413
Be sure to read Precautions on page 25.
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
Five, 0.5
■ Features
? Incorporates an IC chip with a built-in detector element and ampli-
fier.
? Incorporates a detector element with a built-in temperature com-
pensation circuit.
? Compact reflective Photomicrosensor (EE-SY310/-SY410) with a
molded housing and a dust-tight cover.
? A wide supply voltage range: 4.5 to 16 VDC
? Directly connects with C-MOS and TTL.
? Dark ON model (EE-SY313)
? Light ON model (EE-SY413)
■ Absolute Maximum Ratings (Ta = 25 ° C)
Item
Symbol
Rated value
1 5 to 18
17 to 24
Emitter
Forward current I F
Reverse voltage V R
Pulse forward I FP
current
50 mA (see note 1)
4V
1A
(see note 2)
Detector
Power supply
V CC
16 V
A
Internal Circuit
V
O
Unless otherwise specified, the
voltage
Output voltage
Output current
Permissible
V OUT
I OUT
P OUT
28 V
16 mA
250 mW (see note 1)
K
G
tolerances are as shown below.
output dissipa-
tion
Storage
Terminal No.
A
Name
Anode
Dimensions
3 mm max.
Tolerance
± 0.3
Ambient tem- Operating
perature
Topr
Tstg
–40 ° C to 65 ° C
–40 ° C to 85 ° C
K
V
O
G
Cathode
Power supply
(Vcc)
Output (OUT)
Ground (GND)
3 < mm ≤ 6
6 < mm ≤ 10
10 < mm ≤ 18
18 < mm ≤ 30
± 0.375
± 0.45
± 0.55
± 0.65
Soldering temperature Tsol 260 ° C
(see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25 ° C.
2. The pulse width is 10 μ s maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25 ° C)
Item
Symbol
Value
Condition
Emitter
Forward voltage
Reverse current
Peak emission wave-
V F
I R
λ P
1.2 V typ., 1.5 V max.
0.01 μ A typ., 10 μ A max.
920 nm typ.
I F = 20 mA
V R = 4 V
I F = 20 mA
length
Detector
Low-level output voltage V OL
0.12 V typ., 0.4 V max.
Vcc = 4.5 to 16 V, I OL = 16 mA, without incident light (EE-
SY313), with incident light (EE-SY413) (see notes 1 and
2)
High-level output volt-
age
Current consumption
V OH
I CC
15 V min.
3.2 mA typ., 10 mA max.
Vcc = 16 V, R L = 1 k Ω , with incident light (EE-SY313), with-
out incident light (EE-SY413) (see notes 1 and 2)
Vcc = 16 V
Peak spectral sensitivity λ P
wavelength
870 nm typ.
V CC = 4.5 to 16 V
LED current when output is OFF
I FT
10 mA typ., 20 mA max.
V CC = 4.5 to 16 V
LED current when output is ON
Hysteresis
Response frequency
Response delay time
Response delay time
Δ H
f
t PLH (t PHL )
t PHL (t PLH )
17% typ.
50 pps min.
3 μ s typ.
20 μ s typ.
V CC = 4.5 to 16 V
V CC = 4.5 to 16 V, I F = 20 mA, I OL = 16 mA
V CC = 4.5 to 16 V, I F = 20 mA, I OL = 16 mA
V CC = 4.5 to 16 V, I F = 20 mA, I OL = 16 mA
172
EE-SY313/-SY413 Photomicrosensor (Reflective)
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