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参数资料
| 型号： | EE-SY169 |
| 厂商： | Omron Electronics Inc-EMC Div |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 描述： | SENSR OPTO TRANS 4MM REFL TH PCB |
| 产品目录绘图： | Sensor PCB Mount Reflective Sensing |
| 标准包装： | 100 |
| 检测距离： | 0.157" (4mm) |
| 检测方法： | 反射 |
| 电压 - 集电极发射极击穿（最大）： | 30V |
| 电流 - 集电极 (Ic)（最大）： | 20mA |
| 电流 - DC 正向(If)： | 40mA |
| 输出类型： | 光电晶体管 |
| 响应时间： | 30µs，30µs |
| 安装类型： | 通孔 |
| 封装/外壳： | PCB 安装 |
| 包装： | 散装 |
| 工作温度： | 0°C ~ 70°C |
| 产品目录页面： | 2785 (CN2011-ZH PDF) |
| 其它名称： | EESY169 EESY1691 G9YA1048R OR581 |
Photomicrosensor (Reflective)
EE-SY169
Be sure to read Precautions on page 25.
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Features
? High-quality model with plastic lenses.
? Highly precise sensing range with a tolerance of ± 0.6 mm horizon-
tally and vertically.
? With a red LED sensing dyestuff-type inks.
? Limited reflective model.
? For lesser LED forward current the EE-SY169B would be a better
choice.
■ Absolute Maximum Ratings (Ta = 25 ° C)
Item
Symbol
Rated value
Surface A
1 ± 0.1 dia.
(see note)
(see note)
Two, C0.2
1 ± 0.1 dia.
Emitter
Detector
Forward current
Pulse forward cur-
rent
Reverse voltage
Collector–Emitter
I F
I FP
V R
V CEO
40 mA
(see note 1)
300 mA
(see note 2)
3V
30 V
voltage
Emitter–Collector
voltage
Collector current
V ECO
I C
---
20 mA
A
Internal Circuit
C
Note: These dimensions are for
the surface A. Other lead
wire pitch dimensions are for
the housing surface.
Ambient tem-
perature
Collector dissipa-
tion
Operating
Storage
P C
Topr
Tstg
100 mW
(see note 1)
0 ° C to 70 ° C
–20 ° C to 80 ° C
K
E
Unless otherwise specified, the
tolerances are as shown below.
Soldering temperature
Tsol
260 ° C
(see note 3)
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Dimensions Tolerance
3 mm max. ± 0.3
3 < mm ≤ 6 ± 0.375
6 < mm ≤ 10 ± 0.45
10 < mm ≤ 18 ± 0.55
18 < mm ≤ 30 ± 0.65
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25 ° C.
2. The pulse width is 10 μ s maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25 ° C)
Item
Symbol
Value
Condition
Emitter
Detector
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Collector–Emitter saturated
V F
I R
λ P
I L
I D
I LEAK
V CE (sat)
1.85 V typ., 2.3 V max.
0.01 μ A typ., 10 μ A max.
660 nm typ.
160 μ A min., 2,000 μ A max.
2 nA typ., 200 nA max.
2 μ A max.
---
I F = 20 mA
V R = 3 V
I F = 20 mA
I F = 20 mA, V CE = 5 V
White paper with a reflection ratio of 90%,
d = 4 mm (see note)
V CE = 5 V, 0 l x
I F = 20 mA, V CE = 5 V with no reflection
---
voltage
Peak spectral sensitivity wave- λ P
length
850 nm typ.
V CE = 5 V
Rising time
Falling time
tr
tf
30 μ s typ.
30 μ s typ.
V CC = 5 V, R L = 1 k Ω , I L = 1 mA
V CC = 5 V, R L = 1 k Ω , I L = 1 mA
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
154
EE-SY169 Photomicrosensor (Reflective)
相关PDF资料 |
PDF描述 |
|---|---|
| EE-SY171 | SENSOR OPTO TRANS 3.5MM REFL PCB |
| EE-SY193 | SENSOR OPTO TRANS 1MM SMD |
| EE-SY199 | SENSOR OPTO TRANS 1MM REFL SMD |
| EE-SY201 | OPTO SENSOR REFLECT TYPE 4MM |
| EE-SY313 | OPTO SENSOR REFLECT 4.4MM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| EESY169A | 制造商:Omron Electronic Components LLC 功能描述:NON-AMPLIFIED SENSOR - Bulk 制造商:Omron Electronic Components LLC 功能描述:SENSR OPTO TRANS 4MM REFL TH PCB 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Reflective Phototransistor 4-Pin |
| EE-SY169A | 功能描述:光学开关（反射型，光电晶体管输出） REFL CONV PHTOTRNSTR RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel |
| EE-SY169A | 制造商:Omron Electronic Components LLC 功能描述:OPTO SWITCH REFLECTIVE |
| EE-SY169A | 制造商:Omron Electronic Components LLC 功能描述:OPTOSwITCH OPTOCOuPLER OuTPuT TyPE:TRANS |
| EESY169AD | 制造商:OMRON AUTOMATION AND SAFETY 功能描述:PHOTOMICROSENSORW/PLASTIC COVR 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Reflective Phototransistor 4-Pin |
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