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参数资料
| 型号： | EE-SX1082 |
| 厂商： | Omron Electronics Inc-EMC Div |
| 文件页数： | 1/4页 |
| 文件大小： | 231K |
| 描述： | OPTO SENSOR 3MM SLOT PCB TERM |
| 标准包装： | 200 |
| 检测距离： | 0.118"（3mm） |
| 检测方法： | 可传导的 |
| 输出配置： | 光电晶体管 |
| 电流 - DC 正向(If)： | 50mA |
| 电流 - 集电极 (Ic)（最大）： | 20mA |
| 电压 - 集电极发射极击穿（最大）： | 30V |
| 响应时间： | 100µs，1ms |
| 安装类型： | 通孔 |
| 封装/外壳： | PCB 安装 |
| 包装： | 散装 |
| 类型： | 无放大 |
| 工作温度： | -40°C ~ 85°C |
| 其它名称： | EESX1082 |
180 Photomicrosensor (Transmissive) EE-SX1082
Photomicrosensor (Transmissive)
EE-SX1082
I Dimensions
Note:All units are in millimeters unless otherwise indicated.
I Features
"Horizontal sensing aperture.
"PCB mounting type.
"High resolution with a 0.2-mm-wide aperture.
"RoHS Compliant.
I Absolute Maximum Ratings (Ta=25?SPAN class="pst EE-SX1082_2586664_6">C)
Note:1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25癈.
2. The pulse width is 10 ?/SPAN>s maximum with a frequency of 100Hz.
3. Complete soldering within 10 seconds.
I Ordering Information
I Electrical and Optical Characteristics (Ta = 25?SPAN class="pst EE-SX1082_2586664_6">C)
Internal Circuit
K
A
C
E
Terminal No. Name
A
Anode
K
Cathode
C
Collector
E
Emitter
E
C
Unless otherwise specified, the
tolerances are ?.2 mm.
Item
Symbol Rated value
Emitter Forward current I
F
50 mA (seenote 1)
Pulse forward
current
I
FP
1 A (seenote2)
Reverse voltage V
R
4 V
Detector CollectorEmitter
voltage
V
CEO
30 V
EmitterCollector
voltage
V
ECO
---
Collector current I
C
20 mA
Collector dissipation P
C
100 mW (seenote 1)
Ambient
temperature
Operating
Topr 40癈 to 85癈
Storage
Tstg 40癈 to 100癈
Soldering temperature
Tsol 260癈 (see note 3)
Description
Model
Photomicrosensor (transmissive) EE-SX1082
Item
Symbol
Value
Condition
Emitter Forward voltage
V
F
1.2 V typ., 1.5 V max.
I
F
= 30 mA
Reverse current
I
R
0.01 礎 typ., 10 礎 max.
V
R
= 4 V
Peak emission wavelength ?/SPAN>
P
920 nm typ.
I
F
= 20 mA
Detector Light current
I
L
0.12 mA min.
I
F
= 20 mA, V
CE
= 5 V
Dark current
I
D
2 nA typ., 200 nA max.
V
CE
= 10 V, 0 lx
Leakage current
I
LEAK
---
---
CollectorEmitter saturated
voltage
V
CE
(sat) 0.08 V typ., 0.4 V max.
I
F
= 20 mA, I
L
= 0.05 mA
Peak spectral sensitivity
wavelength
?/DIV>
P
850 nm typ.
V
CE
= 10 V
Rising time
tr
100 祍 typ.
V
CC
= 5 V, R
L
= 50 k&, I
L
= 0.1 mA
Falling time
tf
1,000 祍 typ.
V
CC
= 5 V, R
L
= 50 k&, I
L
= 0.1 mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| EESX1088 | 制造商:Omron Electronic Components LLC 功能描述:NON-AMPLIFIED SENSOR - Bulk 制造商:Omron Electronic Components LLC 功能描述:OPTO SENSOR 3.4MM TRANS 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Transmissive 3.4mm Phototransistor 4-Pin |
| EE-SX1088 | 功能描述:光学开关（透射型，光电晶体管输出） PHOTO MICROSENSOR RoHS:否 制造商:Omron Electronics 输出设备:Phototransistor 槽宽:3.4 mm 光圈宽度:0.5 mm 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电流: 安装风格:Through Hole 最大工作温度:+ 85 C 最小工作温度:- 25 C 封装: |
| EESX1088W1 | 制造商:Omron Electronic Components LLC 功能描述:NON-AMPLIFIED SENSOR - Bulk 制造商:Omron Electronic Components LLC 功能描述:OPTO SENSOR VERT SLOT 3.4MM 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Transmissive 3.4mm Phototransistor 4-Pin 制造商:Omron 功能描述:Photointerrupter Transmissive 3.4mm Phototransistor 4-Pin |
| EE-SX1088-W1 | 功能描述:光学开关（透射型，光电晶体管输出） TRANS PHTOTRANSISTOR RoHS:否 制造商:Omron Electronics 输出设备:Phototransistor 槽宽:3.4 mm 光圈宽度:0.5 mm 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电流: 安装风格:Through Hole 最大工作温度:+ 85 C 最小工作温度:- 25 C 封装: |
| EE-SX1088-W1 | 制造商:Omron Electronic Components LLC 功能描述:OPTO SWITCH SLOTTED |
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