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参数资料
| 型号： | EL2004 |
| 英文描述： | 350 MHz FET Buffer |
| 中文描述： | 350兆赫场效应管缓冲区 |
| 文件页数： | 10/16页 |
| 文件大小： | 272K |
| 代理商： | EL2004 |
EL2004EL2004C
350 MHz FET Buffer
g
5V DC Electrical Characteristics
VS e g5V TMIN k TA k TMAX VIN e 0V RL e 50X unless otherwise specified
Parameter
Description
Test Conditions
EL2004
EL2004C
Units
Min
Typ
Max
Test
Min
Typ
Max
Test
Level
VOS
Output Offset
RS s 100 kX TJ e 25 C
10
30
I
10
30
I
mV
Voltage
RS s 100 kX
35
I
35
III
mV
AV
Voltage Gain
VIN e g1V RL e 1kX
090
095
10
I
090
095
10
II
VV
VIN e g1V
080
088
095
I
080
088
095
II
VV
RIN
Input Impedance
TJ e 25 C VIN e g1V
108
1011
I1010
1011
I
X
ROUT
Output
VIN e g1VDC
4
8
I
4
10
II
X
Impedance
DRL e 50X to Infinity
VO
Output Voltage
VIN e g4V
g
20
g
29
I
g
20
g
29
III
V
Swing
IIN
Input Current
TJ e 25 C (Note 2)
250
I
500
I
pA
TA e 25 C (Note 3)
25
IV
5
IV
nA
TJ e TA e TMAX
10
I
20
III
nA
PSRR
Power Supply
VS e g5V to g15V
60
V
60
V
dB
Rejection Ratio
RL e 1kX
IS
Supply Current
RL e 1kX
175
20
I
175
20
II
mA
Note 1 When operating at elevated temperatures the power dissipation of the EL2004 must be limited to the values shown in the
typical performance curve ‘‘Maximum Power Dissipation vs Temperature’’ Junction to case thermal resistance is 31 CW
when dissipation is spread among the transistors in a normal AC steady-state condition In special conditions where heat is
concentrated in one output device junction temperature should be calculated using a thermal resistance of 70 CW
Note 2 Specification is at 25 C junction temperature due to requirements of high-speed automatic testing Actual values at operating
temperatures will exceed the value at TJ e 25 C When supply voltages are g15V no-load operating junction temperatures
may rise 40 Cto60 C above ambient and more under load conditions Accordingly VOS may change one to several mV and
IIN will change significantly during warm-up Refer to IIN vs Temperature graph for expected values
Note 3 Measured in still air seven minutes after application of power See graph of Input Current During Warm-up for further
information
Note 4 Bandwidth is calculated from the rise time The EL2004 has a single pole gain and phase response up to the b3dB
frequency
Note 5 Slew rate is measured between VOUT ea25V and b25V for this test
Note 6 Slew rate is measured between VOUT ea1V and b1V for this test Pulse repetition rate is k50 MHz
g
15V AC Electrical Characteristics
VS e g15V RL e 1kX RS e 50X TJ e 25 C unless otherwise specified
Parameter
Description
Test Conditions
EL2004
EL2004C
Units
Min
Typ
Max
Test
Min
Typ
Max
Test
Level
BW
Bandwidth
(Note 4)
200
350
I
200
350
I
MHz
RL e 50X
140
200
I
140
200
I
MHz
ts
Settling Time to 1%
DVIN e 1V tr e 3ns
6
V
6
V
ns
Cin
Input Capacitance
3
V
3
V
pF
3
TD
is
32in
TD
is
13in
相关PDF资料 |
PDF描述 |
|---|---|
| EL2004CG | 350 MHz FET Buffer |
| EL2004G | 350 MHz FET Buffer |
| EL2004L | 350 MHz FET Buffer |
| EL2005C | High Accuracy Fast Buffer(高精度快速缓冲器) |
| EL2005 | High Accuracy Fast Buffer |
相关代理商/技术参数 |
参数描述 |
|---|---|
| EL2004CG | 制造商:ELANTEC 制造商全称:ELANTEC 功能描述:350 MHz FET Buffer |
| EL2004CG/E+ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog Buffer/Voltage Follower |
| EL2004G | 制造商:ELANTEC 制造商全称:ELANTEC 功能描述:350 MHz FET Buffer |
| EL2004G/883B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog Buffer/Voltage Follower |
| EL2004L | 制造商:ELANTEC 制造商全称:ELANTEC 功能描述:350 MHz FET Buffer |
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