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参数资料
| 型号： | EL2004 |
| 英文描述： | 350 MHz FET Buffer |
| 中文描述： | 350兆赫场效应管缓冲区 |
| 文件页数： | 14/16页 |
| 文件大小： | 272K |
| 代理商： | EL2004 |
EL2004EL2004C
350 MHz FET Buffer
Applications Information
The EL2004 is one member of a family of high
performance buffers manufactured by Elantec
The 2004 is optimized for speed while others offer
choices of input DC parameters or output drive
or cost
The following table illustrates those
members available at the time of this printing
Consult the factory for the latest capabilities in
this developing line
Elantec’s Buffer Family
Slew
Bandwidth
Input
Peak
Rise
Part
Rate
MHz
Current
IOUT
Time
V ms
(Warm)
mA
ns
ELH0002
200
50
6
mA
400
7
ELH0033
1500
100
25 nA
250
29
EL2004
2500
350
25 nA
250
10
EL2005
1500
140
01 nA
250
25
Recommended Layout Precautions
The very high-speed performance of the EL2004
can only be realized by taking certain precau-
tions in circuit layout and power supply decou-
pling Low inductance ceramic chip or disc power
supply decoupling capacitors of 01
mF or more
should be connected with the shortest practical
lead lengths between the device supply leads and
a ground plane In addition it can be helpful to
parallel these with 47
mF electrolytics (Tanta-
lum preferred) Failure to follow these precau-
tions can result in oscillation
Circuit Operation
The EL2004 is effectively an ideal unity gain am-
plifier with almost infinite input impedance and
about 6
X output impedance
Input Characteristics
The input impedance of a junction FET is a
strong function of temperature and input volt-
age Nominal input resistance of EL2004 is 1012
at 25 C junction but as IB doubles every 11 Cin
the JFET
the input resistance falls
During
warm-up self-heating raises the junction temper-
ature up to 60 C or more (without heatsink) so
operating IB will be much higher than the data
sheet 25 C specification
Another factor which can increase bias current is
input voltage If the input voltage is more than
20V below the positive supply the input current
rises exponentially (See Curve)
Input Bias Current vs
Temperature
Input Voltage
Input Bias Current vs
2004 – 9
In applications such as sample and hold circuits
where it is important to maintain low input bias
current over input voltage range the EL2005
High Accuracy Fast Buffer is recommended
The input capacitance of EL2004 comprises the
FET device gate-to-source capacitance (which is
a function of input voltage) and stray capaci-
tance to the case Effective input capacitance can
be minimized by connecting the case to the out-
put since it is electrically isolated Or for reduced
radiation the case may be grounded The AC
characteristics specified in this data sheet were
obtained with the case floating
Offset Voltage Adjustment
The EL2004’s offset voltages have been actively
laser trimmed at g15V supplies to meet specified
limits when the offset adjust pin is shorted to the
offset preset pin If external offset null is re-
quired the offset adjust pin should be connected
to a 200
X trim pot connected to the negative sup-
ply
7
相关PDF资料 |
PDF描述 |
|---|---|
| EL2004CG | 350 MHz FET Buffer |
| EL2004G | 350 MHz FET Buffer |
| EL2004L | 350 MHz FET Buffer |
| EL2005C | High Accuracy Fast Buffer(高精度快速缓冲器) |
| EL2005 | High Accuracy Fast Buffer |
相关代理商/技术参数 |
参数描述 |
|---|---|
| EL2004CG | 制造商:ELANTEC 制造商全称:ELANTEC 功能描述:350 MHz FET Buffer |
| EL2004CG/E+ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog Buffer/Voltage Follower |
| EL2004G | 制造商:ELANTEC 制造商全称:ELANTEC 功能描述:350 MHz FET Buffer |
| EL2004G/883B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog Buffer/Voltage Follower |
| EL2004L | 制造商:ELANTEC 制造商全称:ELANTEC 功能描述:350 MHz FET Buffer |
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