参数资料
型号: EL5420TISZ-T7
厂商: Intersil
文件页数: 11/17页
文件大小: 0K
描述: IC OPAMP GP RR 12MHZ QD 14SOIC
标准包装: 1,000
放大器类型: 电压反馈
电路数: 4
输出类型: 满摆幅
转换速率: 12 V/µs
增益带宽积: 8MHz
-3db带宽: 12MHz
电流 - 输入偏压: 2nA
电压 - 输入偏移: 4000µV
电流 - 电源: 500µA
电流 - 输出 / 通道: 70mA
电压 - 电源,单路/双路(±): 4.5 V ~ 19 V,±2.25 V ~ 9.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 14-SOIC(0.154",3.90mm 宽)
供应商设备封装: 14-SOIC
包装: 带卷 (TR)
3
FN6838.0
September 25, 2009
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Absolute Maximum Ratings (TA = +25°C)
Thermal Information
Supply Voltage between VS+ and VS- . . . . . . . . . . . . . . . . . . +19.8V
Input Voltage Range (VINx+, VINx-) . . . . . . . . .VS- -0.5V, VS+ +0.5V
Input Differential Voltage (VINx+ - VINx-) . . .(VS+ +0.5V)-(VS- -0.5V)
Maximum Continuous Output Current . . . . . . . . . . . . . . . . . ±70mA
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3000V
Thermal Resistance Junction-to-Ambient (Typical)
θJA (°C/W)
16 Ld QFN (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . .
47
14 Ld SOIC (Note 2) . . . . . . . . . . . . . . . . . . . . . . . .
88
14 Ld TSSOP (Note 2) . . . . . . . . . . . . . . . . . . . . . . .
100
Thermal Resistance Junction-to-Case (Typical)
θJC (°C/W)
16 Ld QFN (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . .
9
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Ambient Operating Temperature . . . . . . . . . . . . . . . . -40°C to +85°C
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +150°C
Power Dissipation Curves . . . . . . . . . . . . . . . See Figures 30 and 31
Pb-free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . .see link below
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
1.
θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
2.
θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
3.
For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
VS+ = +5V, VS- = -5V, RL = 10kΩ to 0V, TA = +25°C, unless otherwise specified.
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
VCM = 0V
3
13
mV
TCVOS
Average Offset Voltage Drift (Note 4)
14 LD TSSOP, SOIC package
7
V/°C
16 LD QFN package
2
V/°C
IB
Input Bias Current
VCM = 0V
2
50
nA
RIN
Input Impedance
1G
Ω
CIN
Input Capacitance
2pF
CMIR
Common-Mode Input Range
-5.5
+5.5
V
CMRR
Common-Mode Rejection Ratio
For VINx from -5.5V to +5.5V
50
75
dB
AVOL
Open Loop Gain
-4.5V
≤ V
OUTx ≤ +4.5V
75
105
dB
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -5mA
-4.94
-4.85
V
VOH
Output Swing High
IL = +5mA
4.85
4.94
V
ISC
Short Circuit Current
VCM = 0V, Source: VOUTx short to VS-,
Sink: VOUTx short to VS+
±200
mA
IOUT
Output Current
±70
mA
POWER SUPPLY PERFORMANCE
(VS+) - (VS-)
Supply Voltage Range
4.5
19
V
IS
Supply Current (Per Amplifier)
VCM = 0V, No load
500
750
A
PSRR
Power Supply Rejection Ratio
Supply is moved from ±2.25V to ±9.5V
60
75
dB
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 5)
-4.0V
≤ V
OUTx ≤ +4.0V, 20% to 80%
12
V/s
EL5420T
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