参数资料
型号: EL5420TISZ-T7
厂商: Intersil
文件页数: 12/17页
文件大小: 0K
描述: IC OPAMP GP RR 12MHZ QD 14SOIC
标准包装: 1,000
放大器类型: 电压反馈
电路数: 4
输出类型: 满摆幅
转换速率: 12 V/µs
增益带宽积: 8MHz
-3db带宽: 12MHz
电流 - 输入偏压: 2nA
电压 - 输入偏移: 4000µV
电流 - 电源: 500µA
电流 - 输出 / 通道: 70mA
电压 - 电源,单路/双路(±): 4.5 V ~ 19 V,±2.25 V ~ 9.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 14-SOIC(0.154",3.90mm 宽)
供应商设备封装: 14-SOIC
包装: 带卷 (TR)
4
FN6838.0
September 25, 2009
tS
Settling to +0.1% (Note 6)
AV = +1, VOUTx = 2V step,
RL= 10kΩ, CL= 8pF
500
ns
BW
-3dB Bandwidth
RL= 10kΩ, CL= 8pF
12
MHz
GBWP
Gain-Bandwidth Product
AV = -50, RF = 5kΩ, RG= 100Ω
RL= 10kΩ, CL= 8pF
8MHz
PM
Phase Margin
AV = -50, RF = 5kΩ, RG= 100Ω
RL= 10kΩ, CL= 8pF
50
°
CS
Channel Separation
f = 5MHz
75
dB
Electrical Specifications
VS+ = +5V, VS- = -5V, RL = 10kΩ to 0V, TA = +25°C, unless otherwise specified. (Continued)
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
Electrical Specifications
VS+ = +5V, VS- = 0V, RL = 10kΩ to 2.5V, TA = +25°C, unless otherwise specified.
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
VCM = 2.5V
3
13
mV
TCVOS
Average Offset Voltage Drift (Note 4)
14 LD TSSOP, SOIC package
7
V/°C
16 LD QFN package
2
V/°C
IB
Input Bias Current
VCM = 2.5V
2
50
nA
RIN
Input Impedance
1G
Ω
CIN
Input Capacitance
2pF
CMIR
Common-Mode Input Range
-0.5
+5.5
V
CMRR
Common-Mode Rejection Ratio
For VINx from -0.5V to +5.5V
45
70
dB
AVOL
Open Loop Gain
0.5V
≤ VOUTx ≤+ 4.5V
75
105
dB
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -2.5mA
30
150
mV
VOH
Output Swing High
IL = +2.5mA
4.85
4.97
V
ISC
Short Circuit Current
VCM = 2.5V, Source: VOUTx short to VS-,
Sink: VOUTx short to VS+
±125
mA
IOUT
Output Current
±70
mA
POWER SUPPLY PERFORMANCE
(VS+) - (VS-)
Supply Voltage Range
4.5
19
V
IS
Supply Current (Per Amplifier)
VCM = 2.5V, No load
500
750
A
PSRR
Power Supply Rejection Ratio
Supply is moved from 4.5V to 19V
60
75
dB
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 5)
1V
≤ VOUTx ≤ 4V, 20% to 80%
12
V/s
tS
Settling to +0.1% (Note 6)
AV = +1, VOUTx = 2V step,
RL= 10kΩ, CL= 8pF
500
ns
BW
-3dB Bandwidth
RL= 10kΩ, CL= 8pF
12
MHz
GBWP
Gain-Bandwidth Product
AV = -50, RF = 5kΩ, RG= 100Ω
RL= 10kΩ, CL= 8pF
8MHz
PM
Phase Margin
AV = -50, RF = 5kΩ, RG= 100Ω
RL= 10kΩ, CL= 8pF
50
°
CS
Channel Separation
f = 5MHz
75
dB
EL5420T
相关PDF资料
PDF描述
EL5421CY-T7 IC BUFFER QUAD R-R 12MHZ 10-MSOP
EL5421TIYZ IC BUFFER R-R 12MHZ 10MSOP
EL5423CLZ IC BUFFER I/O 12MHZ 12CH 32-QFN
EL5424ILZ-T7 IC BUFFER LP 12CH 12MHZ 32-QFN
EL5427CRZ-T7 IC BUFFER LP 12CH 2.5MHZ 28TSSOP
相关代理商/技术参数
参数描述
EL5421 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Quad 12MHz Rail-to-Rail Input-Output Buffer
EL5421_07 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Quad 12MHz Rail-to-Rail Input-Output Buffer
EL5421C 制造商:ELANTEC 制造商全称:ELANTEC 功能描述:Quad 12MHz Rail-to-Rail Input-Output Buffer
EL5421CY 功能描述:IC BUFFER QUAD R-R 12MHZ 10-MSOP RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:50 系列:LinCMOS™ 放大器类型:通用 电路数:4 输出类型:- 转换速率:0.05 V/µs 增益带宽积:110kHz -3db带宽:- 电流 - 输入偏压:0.7pA 电压 - 输入偏移:210µV 电流 - 电源:57µA 电流 - 输出 / 通道:30mA 电压 - 电源,单路/双路(±):3 V ~ 16 V,±1.5 V ~ 8 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:14-SOIC(0.154",3.90mm 宽) 供应商设备封装:14-SOIC 包装:管件 产品目录页面:865 (CN2011-ZH PDF) 其它名称:296-1834296-1834-5
EL5421CY-T13 功能描述:IC BUFFER QUAD R-R 12MHZ 10-MSOP RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:50 系列:LinCMOS™ 放大器类型:通用 电路数:4 输出类型:- 转换速率:0.05 V/µs 增益带宽积:110kHz -3db带宽:- 电流 - 输入偏压:0.7pA 电压 - 输入偏移:210µV 电流 - 电源:57µA 电流 - 输出 / 通道:30mA 电压 - 电源,单路/双路(±):3 V ~ 16 V,±1.5 V ~ 8 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:14-SOIC(0.154",3.90mm 宽) 供应商设备封装:14-SOIC 包装:管件 产品目录页面:865 (CN2011-ZH PDF) 其它名称:296-1834296-1834-5