参数资料
型号: EL7534IYZ
厂商: Intersil
文件页数: 2/9页
文件大小: 0K
描述: IC REG BUCK SYNC ADJ 0.6A 10MSOP
标准包装: 50
类型: 降压(降压)
输出类型: 可调式
输出数: 1
输出电压: 0.8 V ~ 5.5 V
输入电压: 2.5 V ~ 5.5 V
PWM 型: 电压模式
频率 - 开关: 1.5MHz
电流 - 输出: 600mA
同步整流器:
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 10-TFSOP,10-MSOP(0.118",3.00mm 宽)
包装: 管件
供应商设备封装: 10-MSOP
产品目录页面: 1242 (CN2011-ZH PDF)
EL7534
Absolute Maximum Ratings (T A = 25°C)
V IN , V DD , POR to SGND . . . . . . . . . . . . . . . . . . . . . . -0.3V to +6.5V
LX to PGND . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to (V IN + +0.3V)
RSI, EN, V O , FB to SGND . . . . . . . . . . . . . . . -0.3V to (V IN + +0.3V)
Operating Ambient Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
PGND to SGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V
Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: T J = T C = T A
Electrical Specifications
V DD = V IN = V EN = 3.3V, C1 = C2 = 10μF, L = 1.8μH, V O = 1.8V, unless otherwise specified.
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
DC CHARACTERISTICS
V FB
I FB
V IN , V DD
Feedback Input Voltage
Feedback Input Current
Input Voltage
790
2.5
800
810
250
5.5
mV
nA
V
V IN,OFF
V IN,ON
I DD
R DS(ON)-PMOS
Minimum Voltage for Shutdown
Maximum Voltage for Startup
Supply Current
PMOS FET Resistance
V IN falling
V IN rising
PWM, V IN = V DD = 5V
EN = 0, V IN = V DD = 5V
V DD = 5V, wafer test only
2
2.2
400
0.1
70
2.2
2.4
500
1
100
V
V
μA
μA
m ?
R DS(ON)-NMOS NMOS FET Resistance
I LMAX
Current Limit
V DD = 5V, wafer test only
45
1.5
75
m ?
A
T OT,OFF
T OT,ON
Over-temperature Threshold
Over-temperature Hysteresis
T rising
T falling
145
130
°C
°C
I EN , I RSI
EN, RSI Current
V EN , V RSI = 0V and 3.3V
-1
1
μA
V EN1 , V RSI1
V EN2 , V RSI2
V POR
EN, RSI Rising Threshold
EN, RSI Falling Threshold
Minimum V FB for POR, WRT Targeted
V FB Value
V DD = 3.3V
V DD = 3.3V
V FB rising
V FB falling
0.8
86
2.4
95
V
V
%
%
V OLPOR
POR Voltage Drop
I SINK = 5mA
35
70
mV
AC CHARACTERISTICS
F PWM
t RSI
t SS
t POR
PWM Switching Frequency
Minimum RSI Pulse Width
Soft-start Time
Power On Reset Delay Time
Guaranteed by design
1.4
80
1.5
25
650
100
1.75
50
120
MHz
ns
μs
ms
2
FN7431.8
July 12, 2006
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