参数资料
| 型号： | EL7563CMZ |
| 厂商： | Intersil |
| 文件页数： | 3/16页 |
| 文件大小： | 0K |
| 描述： | IC REG BUCK SYNC ADJ 4A 20SOIC |
| 标准包装： | 38 |
| 类型： | 降压（降压） |
| 输出类型： | 可调式 |
| 输出数： | 1 |
| 输出电压： | 1 V ~ 2.5 V |
| 输入电压： | 3 V ~ 3.6 V |
| PWM 型： | 电流模式 |
| 频率 - 开关： | 1MHz |
| 电流 - 输出： | 4A |
| 同步整流器： | 是 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-SOIC（0.295"，7.50mm 宽） |
| 包装： | 管件 |
| 供应商设备封装： | 20-SO |
EL7563
Absolute Maximum Ratings (T A = 25°C)
Supply Voltage between V IN or V DD and GND . . . . . . . . . . . . +4.5V
V LX Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V IN +0.3V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V, V DD +0.3V
V HI Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V, V LX +6V
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Operating Ambient Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +135°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: T J = T C = T A
DC Electrical Specifications
V DD = V IN = 3.3V, T A = T J = 25°C, C OSC = 390pF, unless otherwise specified.
PARAMETER
V REF
DESCRIPTION
Reference Accuracy
CONDITIONS
MIN
1.24
TYP
1.26
MAX
1.28
UNIT
V
V REFTC
Reference Temperature Coefficient
50
ppm/°C
V REFLOAD
V RAMP
Reference Load Regulation
Oscillator Ramp Amplitude
0 < I REF < 50μA
-1
1.15
%
V
I OSC_CHG
I OSC_DIS
Oscillator Charge Current
Oscillator Discharge Current
0.1V < V OSC < 1.25V
0.1V < V OSC < 1.25V
200
8
μA
mA
I VDD +V DRV
I VDD_OFF
V DD_OFF
V DD_ON
V DD +V DRV Supply Current
V DD Standby Current
V DD for Shutdown
V DD for Startup
V EN = 2.7V, F OSC = 120kHz
EN = 0
2
2.4
2.6
5.5
1
6.5
1.5
2.65
2.95
mA
mA
V
V
T OT
T HYS
Over Temperature Threshold
Over Temperature Hysteresis
135
20
°C
°C
I LEAK
I LMAX
Internal FET Leakage Current
Peak Current Limit
EN = 0, L X = 3.3V (low FET), L X = 0V
(high FET)
5
10
μA
A
R DSON
R DSONTC
FET On Resistance
R DSON Tempco
Wafer level test only
30
0.2
60
m ?
m ? /°C
I STP
Auxiliary Supply Tracking Positive Input
Pull Down Current
V STP = V IN /2
-4
2.5
μA
I STN
V PGP
V PGN
Auxiliary Supply Tracking Negative Input
Pull Up Current
Positive Power Good Threshold
Negative Power Good Threshold
V STN = V IN /2
With respect to target output voltage
With respect to target output voltage
6
-16
2.5
4
16
-6
μA
%
%
V PG_HI
V PG_LO
V OVP
Power Good Drive High
Power Good Drive Low
Over Voltage Protection
I PG = 1mA
I PG = -1mA
2.7
10
0.5
V
V
%
V FB
V FB_LINE
V FB_LOAD
V FB_TC
I FB
Output Initial Accuracy
Output Line Regulation
Output Load Regulation
Output Temperature Stability
Feedback Input Pull Up Current
I LOAD = 0A
V IN = 3.3V, ? V IN = 10%, I LOAD = 0A
0.5A < I LOAD < 4A
-40°C < T A < 85°C, I LOAD = 2A
V FB = 0V
0.977
0.992
0.5
0.5
±1
100
1.007
200
V
%
%
%
nA
V EN_HI
V EN_LO
EN Input High Level
EN Input Low Level
1
2.7
V
V
I EN
Enable Pull Up Current
V EN = 0
-4
-2.5
μA
3
FN7296.2
May 13, 2005
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