参数资料
| 型号： | EL7586ILZ-T7 |
| 厂商： | Intersil |
| 文件页数： | 15/21页 |
| 文件大小： | 0K |
| 描述： | IC POWER SUPPLY TFT-LCD 20-QFN |
| 标准包装： | 1,000 |
| 应用： | 转换器，TFT，LCD |
| 输入电压： | 3 V ~ 5 V |
| 输出数： | 4 |
| 输出电压： | 5.5 V ~ 20 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-VFQFN 裸露焊盘 |
| 供应商设备封装： | 20-QFN 裸露焊盘（4x4） |
| 包装： | 带卷 (TR) |
EL7586, EL7586A
more output current under the low dropout condition (forced
beta of 10). Typical V LOGIC voltage supported by EL7586
and EL7586A ranges from +1.3V to V DD -0.2V. A fault
comparator is also included for monitoring the output
voltage. The undervoltage threshold is set at 25% below the
CHARGE PUMP
V IN OUTPUT
OR A VDD
7k ?
1.2V reference.
Set-Up Output Voltage
DRVP
NPN
CASCODE
TRANSISTOR
Q3
V ON
V ON = V REF × ? 1 + ---------- ?
V OFF = V REFN + ---------- × ( V REFN – V REF )
V LOGIC = V REF × ? ?
Refer to the Typical Application Diagram, the output voltages
of V ON , V OFF , and V LOGIC are determined by the following
equations:
? R 12 ?
? R 11 ?
R 22
R 21
? R 42 ?
1 + ----------
? R 41 ?
Where V REF = 1.2V, V REFN = 0.2V.
Resistor networks in the order of 250k ? , 120k ? and 10k ?
EL7586
EL7586A
FBP
FIGURE 31. CASCODE NPN TRANSISTOR CONFIGURATION
FOR HIGH CHARGE PUMP OUTPUT VOLTAGE
(>36V)
LX
0.1μF
are recommended for V ON , V OFF and V LOGIC , respectively.
Charge Pump
0.1μF
A VDD
To generate an output voltage higher than V BOOST , single or
multiple stages of charge pumps are needed. The number of
stage is determined by the input and output voltage. For
DRVP
7k ?
Q3
0.1μF
0.1μF
N POSITIVE ≥ --------------------------------------------------------------
positive charge pump stages:
V OUT + V CE – V INPUT
V INPUT – 2 × V F
EL7586
EL7586A
FBP
0.47μF
0.1μF
V ON
(>36V)
0.22μF
where V CE is the dropout voltage of the pass component of
the linear regulator. It ranges from 0.3V to 1V depending on
N NEGATIVE ≥ -------------------------------------------------
the transistor. V F is the forward-voltage of the charge pump
rectifier diode.
The number of negative charge pump stages is given by:
V OUTPUT + V CE
V INPUT – 2 × V F
To achieve high efficiency and low material cost, the lowest
number of charge pump stages which can meet the above
requirements, is always preferred.
High Charge Pump Output Voltage (>36V)
Applications
In the applications where the charge pump output voltage is
over 36V, an external npn transistor need to be inserted into
between DRVP pin and base of pass transistor Q3 as shown
in Figure 31; or the linear regulator can control only one
stage charge pump and regulate the final charge pump
output as shown in Figure 32.
15
FIGURE 32. THE LINEAR REGULATOR CONTROLS ONE
STAGE OF CHARGE PUMP
Discontinuous/Continuous Boost Operation and
it's Effect on the Charge Pumps
The EL7586 and EL7586A V ON and V OFF architecture uses
LX switching edges to drive diode charge pumps from which
LDO regulators generate the V ON and V OFF supplies. It can
be appreciated that should a regular supply of LX switching
edges be interrupted, for example during discontinuous
operation at light A VDD boost load currents, then this may
affect the performance of V ON and V OFF regulation -
depending on their exact loading conditions at the time.
To optimize V ON /V OFF regulation, the boundary of
discontinuous/continuous operation of the boost converter
can be adjusted, by suitable choice of inductor given V IN ,
V OUT , switching frequency and the A VDD current loading, to
be in continuous operation.
FN9210.2
January 17, 2006
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