参数资料
型号: EMN11T2R
厂商: Rohm Semiconductor
文件页数: 1/3页
文件大小: 333K
描述: DIODE SWITCH 80V 100MA HS EMD6
产品培训模块: Diodes Overview
标准包装: 8,000
电压 - 在 If 时为正向 (Vf)(最大): 1.2V @ 100mA
电流 - 在 Vr 时反向漏电: 100nA @ 70V
电流 - 平均整流 (Io)(每个二极管): 100mA
电压 - (Vr)(最大): 80V
反向恢复时间(trr): 4ns
二极管类型: 标准
速度: 小信号 =< 200mA(Io),任意速度
二极管配置: 2 对共阴极
安装类型: 表面贴装
封装/外壳: SOT-563,SOT-666
供应商设备封装: EMD6
包装: 带卷 (TR)
其它名称: EMN11T2R-ND
EMN11T2RTR
Data Sheet
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
Switching Diode
EMN11
?Applications
?Dimensions (Unit : mm) ?Land size figure (Unit : mm)
Ultra high speed switching
?Features
1) Ultra small mold type. (EMD6)
2) High reliability.
?Construction
Silicon epitaxial planar
?Structure
?Taping specifications (Unit : mm)
?Absolute maximum ratings (Ta=25°C)
Symbol UnitLimits
VRM
V
VR
V
IFM
mA
Io mA100
Isurge
A
Power dissipation 150Pd mW/Total *
Junction temperature 150Tj
°C
Tstg
°C
*Pd=120mW when only 1 circuit is operating. CONDITION=Each terminal mounted on a recommended land pattern.(0.35x0.9mm)
?Electrical characteristics
(Ta=25°C)
Symbol Min. Typ. Max. Unit
VF
- - 1.2 V
IF=100mA
IR
- - 0.1
μA
VR=70V
Ct - - 3.5 pF
VR=6V , f=1MHz
trr - - 4 ns
VR=6V , IF=5mA , RL=50?
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Storage temperature
?55 to ?150
Parameter
Conditions
Average rectified forward current (Single)
Surge current (t=1us) (Single)
4
Reverse voltage (DC)
80
Forward voltage (Single)
300
Parameter
Reverse voltage (repetitive peak)
80
EMD6
0.4
0.45
0.25
0.30.15
1.0
0.5
0.5
0.15
0.25
1.55
1.65±0.1
4.0±0.1
4.0±0.1
2.0±0.05
φ1.5±0.1
      0
3.5±0.05
1.75±0.1
8.0±0.2
φ0.8±0.1
5.5±0.2
1.65±0.1
0.65±0.1
0.3±0.1
0~0.1
1PIN
1.65±0.01
ROHM : EMD6
JEITA : SC-75A Size
dot (year week factory)
0.13±0.05
0.5±0.05
0~0.1
(1)
(5)
(3)
(6)
(2)
(4)
0.5
0.5
1.0±0.1
0.22±0.05
1.6±0.1
1.2±0.1
1.6±0.1
1/2
2011.06 - Rev.B
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