- 您现在的位置：买卖IC网 > PDF目录295883 > EN29LV320B-90BC (Eon Silicon Solution Inc.) 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only PDF资料下载
参数资料
| 型号： | EN29LV320B-90BC |
| 厂商： | Eon Silicon Solution Inc. |
| 英文描述： | 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| 中文描述： | 32兆位（4096K × 8位/ 2048K x 16位）闪存引导扇区闪存，CMOS 3.0伏，只 |
| 文件页数： | 15/49页 |
| 文件大小： | 437K |
| 代理商： | EN29LV320B-90BC |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页当前第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页
This Data Sheet may be revised by subsequent versions
2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
22
EN29LV320
Rev. E, Issue Date: 2006/05/16
When the Embedded Erase algorithm is completed, the device returns to reading array data and
addresses are no longer latched. The system can determine the status of the erase operation by
using DQ7, DQ6, or DQ2. Refer to “Write Operation Status” for information on these status bits.
Flowchart 4 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations
tables in the “AC Characteristics” section for parameters, and to the Sector Erase Operations Timing
diagram for timing waveforms.
Sector Erase Suspend / Resume Command
The Sector Erase Suspend command allows the system to interrupt a sector erase operation and
then read data from, or program data to, any sector not selected for erasure. This command is valid
only during the sector erase operation. The Sector Erase Suspend command is ignored if written
during the chip erase operation or Embedded Program algorithm. Addresses are don’t-cares when
writing the Sector Erase Suspend command.
When the Sector Erase Suspend command is written during a sector erase operation, the device
requires a maximum of 20 s to suspend the erase operation.
After the erase operation has been suspended, the system can read array data from or program
data to any sector not selected for erasure. Normal read and write timings and command definitions
apply. Please note that Autoselect command sequence can not be accepted during Sector
Erase Suspend.
Reading at any address within erase-suspended sectors produces status data on DQ7–DQ0. The
system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is
erase-suspended. See “Write Operation Status” for information on these status bits.
After an erase-suspended program operation is complete, the system can once again read array
data within non-suspended sectors. The system can determine the status of the program operation
using the DQ7 or DQ6 status bits, just as in the standard program operation. See “Write Operation
Status” for more information. The Autoselect command is not supported during Sector Erase
Suspend Mode.
The system must write the Sector Erase Resume command (address bits are don’t-care) to exit the
sector erase suspend mode and continue the sector erase operation. Further writes of the Resume
command are ignored. Another Sector Erase Suspend command can be written after the device has
resumed erasing.
WRITE OPERATION STATUS
DQ7: DATA# Polling
The EN29LV320 provides DATA# polling on DQ7 to indicate the status of the embedded operations.
The DATA# Polling feature is active during the Word/Byte Programming, Sector Erase, Chip Erase,
and Sector Erase Suspend. (See Table 10)
When the embedded programming is in progress, an attempt to read the device will produce the
complement of the data written to DQ7. Upon the completion of the programming operation, an
attempt to read the device will produce the true data written to DQ7. DATA# polling is valid after the
rising edge of the fourth WE# or CE# pulse in the four-cycle sequence for program.
When the embedded Erase is in progress, an attempt to read the device will produce a “0” at the
DQ7 output. Upon the completion of the embedded Erase, the device will produce the “1” at the DQ7
output during the read cycles. For Chip Erase or Sector Erase, DATA# polling is valid after the rising
edge of the last WE# or CE# pulse in the six-cycle sequence.
相关PDF资料 |
PDF描述 |
|---|---|
| EN29LV320B-90BIP | 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV320B-90BI | 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV320B-90TC | 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN3 | GLASS FILLED POLYETHYLENE POLYMER, FEMALE; MALE, CIRCULAR CONNECTOR, CRIMP; SOLDER |
| EN3I2F16PAGK | 2 CONTACT(S), FEMALE, CIRCULAR CONNECTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| EN29LV320BT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:32M TOP BOOT TSOP |
| EN29LV320CT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:32M Parallel Flash, x8/x16, 70ns, TSOP48 |
| EN29LV400AB-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV400A Series, 4 Mbit (512 K x 8) 70 NS 48 TSOP 3 V Bottom Boot NOR Flash |
| EN29LV400AB-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV400A Series 4 Mbit (512 K x 8) 70 NS 48 TSOP 3 V Bottom Boot NOR Flash |
| EN29LV400AT-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:4 Mb PAR NOR 512Kx8bit/256Kx16bit 3V 48-TSOP |
发布紧急采购，3分钟左右您将得到回复。