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参数资料
| 型号： | EN29LV320B-90BCP |
| 厂商： | Eon Silicon Solution Inc. |
| 英文描述： | 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| 中文描述： | 32兆位（4096K × 8位/ 2048K x 16位）闪存引导扇区闪存，CMOS 3.0伏，只 |
| 文件页数： | 25/49页 |
| 文件大小： | 437K |
| 代理商： | EN29LV320B-90BCP |
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This Data Sheet may be revised by subsequent versions
2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
31
EN29LV320
Rev. E, Issue Date: 2006/05/16
ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Unit
Storage Temperature
-65 to +125
°C
Plastic Packages
-65 to +125
°C
Ambient Temperature
With Power Applied
-55 to +125
°C
Output Short Circuit Current
P
1
P
200
MA
A9, OE#, RESET#
P
and WP#/ACC
P
2
P
-0.5 to +11.5
V
All other pins
P
3
P
-0.5 to Vcc+0.5
V
Voltage with
Respect to Ground
Vcc
-0.5 to + 4.0
V
Notes:
1.
No more than one output shorted at a time. Duration of the short circuit should not be greater than one second.
2.
Minimum DC input voltage on A9, OE#, RESET# and WP#/ACC pins is –0.5V. During voltage transitions, A9, OE#,
RESET# and WP#/ACC pins may undershoot V
B
ssB to –1.0V for periods of up to 50ns and to –2.0V for periods of up to 20ns.
See figure below. Maximum DC input voltage on A9, OE#, and RESET# is 11.5V which may overshoot to 12.5V for periods
up to 20ns.
3.
Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may undershoot V
B
ssB to –1.0V for
periods of up to 50ns and to –2.0 V for periods of up to 20ns. See figure below. Maximum DC voltage on output and I/O
pins is V
B
ccB + 0.5 V. During voltage transitions, outputs may overshoot to VBccB + 1.5 V for periods up to 20ns. See figure
below.
4.
Stresses above the values so mentioned above may cause permanent damage to the device. These values are for a stress
rating only and do not imply that the device should be operated at conditions up to or above these values. Exposure of the
device to the maximum rating values for extended periods of time may adversely affect the device reliability.
RECOMMENDED OPERATING RANGES
P
1
P
Parameter
Value
Unit
Ambient Operating Temperature
Commercial Devices
Industrial Devices
0 to 70
-40 to 85
°C
Operating Supply Voltage
Vcc
Full Voltage Range: 2.7 to
3.6V
V
1.
Recommended Operating Ranges define those limits between which the functionality of the device is guaranteed.
Vcc
+1.5V
Maximum Negative Overshoot
Maximum Positive Overshoot
Waveform
相关PDF资料 |
PDF描述 |
|---|---|
| EN29LV320B-90BC | 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV320B-90BIP | 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV320B-90BI | 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV320B-90TC | 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN3 | GLASS FILLED POLYETHYLENE POLYMER, FEMALE; MALE, CIRCULAR CONNECTOR, CRIMP; SOLDER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| EN29LV320BT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:32M TOP BOOT TSOP |
| EN29LV320CT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:32M Parallel Flash, x8/x16, 70ns, TSOP48 |
| EN29LV400AB-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV400A Series, 4 Mbit (512 K x 8) 70 NS 48 TSOP 3 V Bottom Boot NOR Flash |
| EN29LV400AB-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV400A Series 4 Mbit (512 K x 8) 70 NS 48 TSOP 3 V Bottom Boot NOR Flash |
| EN29LV400AT-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:4 Mb PAR NOR 512Kx8bit/256Kx16bit 3V 48-TSOP |
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