- 您现在的位置：买卖IC网 > PDF目录295883 > EN29LV320B-90BCP (Eon Silicon Solution Inc.) 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only PDF资料下载
参数资料
| 型号： | EN29LV320B-90BCP |
| 厂商： | Eon Silicon Solution Inc. |
| 英文描述： | 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| 中文描述： | 32兆位（4096K × 8位/ 2048K x 16位）闪存引导扇区闪存，CMOS 3.0伏，只 |
| 文件页数： | 40/49页 |
| 文件大小： | 437K |
| 代理商： | EN29LV320B-90BCP |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页当前第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页
This Data Sheet may be revised by subsequent versions
2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
45
EN29LV320
Rev. E, Issue Date: 2006/05/16
ERASE AND PROGRAM PERFORMANCE
Limits
Parameter
Typ
Max
Unit
Comments
Sector Erase Time
0.5
10
Sec
Chip Erase Time
70
Sec
Excludes 00h programming prior to
erasure
Byte Programming Time
8
300
S
Accelerated Byte/Word Program Time
7
200
S
Word Programming Time
8
300
S
Byte
35
100
Chip Programming Time
Word
17
50
Sec
Excludes system level overhead
Erase/Program Endurance
100K
Cycles
Minimum 100K cycles
Note: Typical Conditions are room temperature, 3V and checkboard pattern programmed.
LATCH UP CHARACTERISTICS
Parameter Description
Min
Max
Input voltage with respect to V
B
ssB on all pins except I/O pins
(including A9, Reset and OE#)
-1.0 V
12.0 V
Input voltage with respect to V
B
ssB on all I/O Pins
-1.0 V
Vcc + 1.0 V
Vcc Current
-100 mA
100 mA
Note: These are latch up characteristics and the device should never be put under these conditions. Refer to
Absolute Maximum ratings for the actual operating limits.
48-PIN TSOP PACKAGE CAPACITANCE
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
B
INB
Input Capacitance
V
B
INB = 0
6
7.5
pF
C
B
OUTB
Output Capacitance
V
B
OUTB = 0
8.5
12
pF
C
B
IN2B
Control Pin Capacitance
V
B
INB = 0
7.5
9
pF
Note: Test conditions are Temperature = 25°C and f = 1.0 MHz.
DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
Minimum Pattern Data Retention Time
125°C
20
Years
相关PDF资料 |
PDF描述 |
|---|---|
| EN29LV320B-90BC | 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV320B-90BIP | 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV320B-90BI | 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV320B-90TC | 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN3 | GLASS FILLED POLYETHYLENE POLYMER, FEMALE; MALE, CIRCULAR CONNECTOR, CRIMP; SOLDER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| EN29LV320BT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:32M TOP BOOT TSOP |
| EN29LV320CT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:32M Parallel Flash, x8/x16, 70ns, TSOP48 |
| EN29LV400AB-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV400A Series, 4 Mbit (512 K x 8) 70 NS 48 TSOP 3 V Bottom Boot NOR Flash |
| EN29LV400AB-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV400A Series 4 Mbit (512 K x 8) 70 NS 48 TSOP 3 V Bottom Boot NOR Flash |
| EN29LV400AT-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:4 Mb PAR NOR 512Kx8bit/256Kx16bit 3V 48-TSOP |
发布紧急采购，3分钟左右您将得到回复。