参数资料
型号: EP4S100G2F40I1
厂商: Altera
文件页数: 22/22页
文件大小: 0K
描述: IC STRATIX IV FPGA 230K 1517FBGA
产品培训模块: Three Reasons to Use FPGA's in Industrial Designs
标准包装: 3
系列: STRATIX® IV GT
LAB/CLB数: 9120
逻辑元件/单元数: 228000
RAM 位总计: 17544192
输入/输出数: 654
电源电压: 0.92 V ~ 0.98 V
安装类型: 表面贴装
工作温度: -40°C ~ 100°C
封装/外壳: 1517-BBGA
供应商设备封装: 1517-FBGA(40x40)
Chapter 1: Overview for the Stratix IV Device Family
1–9
Architecture Features
September 2012
Altera Corporation
PLLs
Three to 12 PLLs per device supporting spread-spectrum input tracking,
programmable bandwidth, clock switchover, dynamic reconfiguration, and delay
compensation
On-chip PLL power supply regulators to minimize noise coupling
I/O Features
Sixteen to 24 modular I/O banks per device with 24 to 48 I/Os per bank designed
and packaged for optimal simultaneous switching noise (SSN) performance and
migration capability
Support for a wide range of industry I/O standards, including single-ended
(LVTTL/CMOS/PCI/PCIX), differential (LVDS/mini-LVDS/RSDS),
voltage-referenced single-ended and differential (SSTL/HSTL Class I/II) I/O
standards
On-chip series (RS) and on-chip parallel (RT) termination with auto-calibration for
single-ended I/Os and on-chip differential (RD) termination for differential I/Os
Programmable output drive strength, slew rate control, bus hold, and weak
pull-up capability for single-ended I/Os
User I/O:GND:VCC ratio of 8:1:1 to reduce loop inductance in the package—PCB
interface
Programmable transmitter differential output voltage (VOD) and pre-emphasis for
high-speed LVDS I/O
High-Speed Differential I/O with DPA and Soft-CDR
Dedicated circuitry on the left and right sides of the device to support differential
links at data rates from 150 Mbps to 1.6 Gbps
Up to 98 differential SERDES in Stratix IV GX devices, up to 132 differential
SERDES in Stratix IV E devices, and up to 47 differential SERDES in Stratix IV GT
devices
DPA circuitry at the receiver automatically compensates for channel-to-channel
and channel-to-clock skew in source synchronous interfaces
Soft-CDR circuitry at the receiver allows implementation of asynchronous serial
interfaces with embedded clocks at up to 1.6 Gbps data rate (SGMII and GbE)
External Memory Interfaces
Support for existing and emerging memory interface standards such as DDR
SDRAM, DDR2 SDRAM, DDR3 SDRAM, QDRII SRAM, QDRII+ SRAM, and
RLDRAM II
DDR3 up to 1,067 Mbps/533 MHz
Programmable DQ group widths of 4 to 36 bits (includes parity bits)
Dynamic OCT, trace mismatch compensation, read-write leveling, and half-rate
register capabilities provide a robust external memory interface solution
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EP4S100G2F40I1N 功能描述:FPGA - 现场可编程门阵列 FPGA - Stratix IV 9120 LABs 654 IOs RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 栅极数量: 逻辑块数量:943 内嵌式块RAM - EBR:1956 kbit 输入/输出端数量:128 最大工作频率:800 MHz 工作电源电压:1.1 V 最大工作温度:+ 70 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-256
EP4S100G2F40I2 功能描述:FPGA - 现场可编程门阵列 FPGA - Stratix IV 9120 LABs 654 IOs RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 栅极数量: 逻辑块数量:943 内嵌式块RAM - EBR:1956 kbit 输入/输出端数量:128 最大工作频率:800 MHz 工作电源电压:1.1 V 最大工作温度:+ 70 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-256
EP4S100G2F40I2N 功能描述:FPGA - 现场可编程门阵列 FPGA - Stratix IV 9120 LABs 654 IOs RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 栅极数量: 逻辑块数量:943 内嵌式块RAM - EBR:1956 kbit 输入/输出端数量:128 最大工作频率:800 MHz 工作电源电压:1.1 V 最大工作温度:+ 70 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-256
EP4S100G3F45I1 功能描述:FPGA - 现场可编程门阵列 FPGA - Stratix IV 11648 LABs 781 IOs RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 栅极数量: 逻辑块数量:943 内嵌式块RAM - EBR:1956 kbit 输入/输出端数量:128 最大工作频率:800 MHz 工作电源电压:1.1 V 最大工作温度:+ 70 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-256
EP4S100G3F45I1N 功能描述:FPGA - 现场可编程门阵列 FPGA - Stratix IV 11648 LABs 781 IOs RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 栅极数量: 逻辑块数量:943 内嵌式块RAM - EBR:1956 kbit 输入/输出端数量:128 最大工作频率:800 MHz 工作电源电压:1.1 V 最大工作温度:+ 70 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-256