参数资料
型号: EP4SGX530NF45C3NES
厂商: Altera
文件页数: 68/82页
文件大小: 0K
描述: IC STRATIX IV GX 530K 1932-FBGA
标准包装: 3
系列: Stratix® IV GX
LAB/CLB数: 21248
逻辑元件/单元数: 531200
RAM 位总计: 28033024
输入/输出数: 904
电源电压: 0.87 V ~ 0.93 V
安装类型: 表面贴装
工作温度: 0°C ~ 85°C
封装/外壳: 1932-BBGA
供应商设备封装: 1932-FBGA(45x45)
1–62
Chapter 1: DC and Switching Characteristics for Stratix IV Devices
I/O Timing
Stratix IV Device Handbook
March 2014
Altera Corporation
Volume 4: Device Datasheet and Addendum
Figure 1–7 shows the timing diagram for the oe and dyn_term_ctrl signals.
Duty Cycle Distortion (DCD) Specifications
Table 1–51 lists the worst-case DCD for Stratix IV devices.
I/O Timing
Altera offers two ways to determine I/O timing—the Excel-based I/O Timing and the
Quartus II Timing Analyzer.
Excel-based I/O Timing provides pin timing performance for each device density and
speed grade. The data is typically used prior to designing the FPGA to get an estimate
of the timing budget as part of the link timing analysis. The Quartus II Timing
Analyzer provides a more accurate and precise I/O timing data based on the specifics
of the design after you complete place-and-route.
f The Excel-based I/O Timing spreadsheet is downloadable from the Literature:
Figure 1–7. Timing Diagram for the oe and dyn_term_ctrl Signals
Table 1–51. Worst-Case DCD on Stratix IV I/O Pins (1)
Symbol
–2/–2×
Speed Grade
–3
Speed Grade
–4
Speed Grade
Unit
Min
Max
Min
Max
Min
Max
Output Duty Cycle
45
55
45
55
45
55
%
Note to Table 1–51:
(1) The listed specification is only applicable to the output buffer across different I/O standards.
dyn_term_ctrl
oe
RX
Tristate
TX
TRS_RT
TRS_RT
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