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参数资料
| 型号： | EPA480 |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | DC-6GHz High Efficiency Heterojunction Power FET |
| 中文描述： | 的DC - 6GHz的高效率异质结功率场效应管 |
| 文件页数： | 1/2页 |
| 文件大小： | 245K |
| 代理商： | EPA480 |
*
6
'
6285&(
Excelics
EPA480C-SOT89
DC-6GHz High Efficiency Heterojunction Power FET
Features
LOW COST SURFACE-MOUNT PLASTIC PACKAGE
+36dBm TYPICAL OUTPUT POWER
13.0dB TYPICAL POWER GAIN AT 2GHz
0.5dB TYPICAL NOISE FIGURE AT 2GHz
+43dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT
POINT AT 2GHz
0.4 X 4800 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION PROFILE
PROVIDES EXTRA HIGH POWER EFFICIENCY
AND HIGH RELIABILITY
Applications
Analog and Digital Wireless System
High Dynamic Range LNA
HPA
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
DATA SHEET
SYMBOLS
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression f = 2GHz
Vds=8V, Ids=750mA
Gain at 1dB Compression f = 2GHz
Vds=8V, Ids=750mA
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=750mA f = 2GHz
Noise Figure f = 2GHz
Vds=5V, Ids=300mA
Vds=5-8V, Ids=750mA
Output 3rd Order Intercept Point f = 2GHz
Vds=5-8V, Ids=750mA
Vds=5V, Ids=300mA
Saturated Drain Current Vds=3V, Vgs=0V
MIN
34.5
11.0
TYP
36.0
13.0
50
MAX
UNIT
P
1dB
dBm
G
1dB
dB
PAE
%
NF
0.5
1.2
43
41
1440
dB
IP3
dBm
Idss
880
1880
mA
Gm
Transconductance Vds=3V, Vgs=0V
960
1560
mS
Vp
Pinch-off Voltage Vds=3V, Ids=14mA
-1.0
-2.5
V
BVgd
Drain Breakdown Voltage Igd=4.8mA
-11
-15
V
BVgs
Source Breakdown Voltage Igs=4.8mA
-7
-14
V
Rth
Thermal Resistance
14*
o
C/W
* Overall Rth depends on case mounting
.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
12V
-8V
Idss
240mA
33dBm
175
o
C
-65/175
o
C
10 W
CONTINUOUS
2
8V
-3V
1.05A
40mA
@ 3dB Compression
150
o
C
-65/150
o
C
8.4 W
(Top View)
All Dimensions In Mils
相关PDF资料 |
PDF描述 |
|---|---|
| EPB025A | Low Noise High Gain Heterojunction FET |
| EPC16 | Configuration Devices for SRAM-Based LUT Devices |
| EPC2 | Configuration Devices for SRAM-Based LUT Devices |
| EPC4 | Configuration Devices for SRAM-Based LUT Devices |
| EPC8 | Configuration Devices for SRAM-Based LUT Devices |
相关代理商/技术参数 |
参数描述 |
|---|---|
| EPA480B | 制造商:EXCELICS 制造商全称:EXCELICS 功能描述:High Efficiency Heterojunction Power FET |
| EPA480BV | 制造商:EXCELICS 制造商全称:EXCELICS 功能描述:High Efficiency Heterojunction Power FET |
| EPA480C | 制造商:EXCELICS 制造商全称:EXCELICS 功能描述:High Efficiency Heterojunction Power FET |
| EPA480C-180F | 制造商:EXCELICS 制造商全称:EXCELICS 功能描述:High Efficiency Heterojunction Power FET |
| EPA480C-CP083 | 制造商:EXCELICS 制造商全称:EXCELICS 功能描述:High Efficiency Heterojunction Power FET |
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