参数资料
型号: EPM3128ATI100-10N
厂商: Altera
文件页数: 6/46页
文件大小: 0K
描述: IC MAX 3000A CPLD 128 100-TQFP
产品变化通告: Bond Wire Change 4/Sept/2008
标准包装: 270
系列: MAX® 3000A
可编程类型: 系统内可编程
最大延迟时间 tpd(1): 10.0ns
电压电源 - 内部: 3 V ~ 3.6 V
逻辑元件/逻辑块数目: 8
宏单元数: 128
门数: 2500
输入/输出数: 80
工作温度: -40°C ~ 100°C
安装类型: 表面贴装
封装/外壳: 100-TQFP
供应商设备封装: 100-TQFP(14x14)
包装: 托盘
产品目录页面: 603 (CN2011-ZH PDF)
其它名称: 544-1987
EPM3128ATI100-10N-ND
14
Altera Corporation
MAX 3000A Programmable Logic Device Family Data Sheet
Programming Sequence
During in-system programming, instructions, addresses, and data are
shifted into the MAX 3000A device through the TDI input pin. Data is
shifted out through the TDO output pin and compared against the
expected data.
Programming a pattern into the device requires the following six ISP
stages. A stand-alone verification of a programmed pattern involves only
stages 1, 2, 5, and 6.
1.
Enter ISP. The enter ISP stage ensures that the I/O pins transition
smoothly from user mode to ISP mode. The enter ISP stage requires
1ms.
2.
Check ID. Before any program or verify process, the silicon ID is
checked. The time required to read this silicon ID is relatively small
compared to the overall programming time.
3.
Bulk Erase. Erasing the device in-system involves shifting in the
instructions to erase the device and applying one erase pulse of
100 ms.
4.
Program. Programming the device in-system involves shifting in the
address and data and then applying the programming pulse to
program the EEPROM cells. This process is repeated for each
EEPROM address.
5.
Verify. Verifying an Altera device in-system involves shifting in
addresses, applying the read pulse to verify the EEPROM cells, and
shifting out the data for comparison. This process is repeated for
each EEPROM address.
6.
Exit ISP. An exit ISP stage ensures that the I/O pins transition
smoothly from ISP mode to user mode. The exit ISP stage requires
1ms.
Programming Times
The time required to implement each of the six programming stages can
be broken into the following two elements:
A pulse time to erase, program, or read the EEPROM cells.
A shifting time based on the test clock (TCK) frequency and the
number of TCK cycles to shift instructions, address, and data into the
device.
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