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参数资料
| 型号： | ES29BDS160FT-70TGI |
| 厂商： | 优先(苏州)半导体有限公司 |
| 英文描述： | 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 的4Mb（512Kx 8/256K × 16），3.0伏的CMOS只，引导扇区闪存 |
| 文件页数： | 50/51页 |
| 文件大小： | 697K |
| 代理商： | ES29BDS160FT-70TGI |
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ES I
8
Rev.0B January 5, 2006
ES29LV400E
Excel Semiconductor inc.
the device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write
commands
for
the duration of
the
RESET# pulse The device also resets the internal
state machine to reading array data. The operation
that was interrupted should be reinitiated once after
the device is ready to accept another command
sequence, to ensure data integrity.
CMOS Standby during Device Reset
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at Vss + 0.3V, the
device draws the greatly reduced CMOS standby
current ( ICC4 ). If RESET# is held at VIL but not
within Vss+0.3V, the standby current will be greater.
RY/BY# and Terminating Operations
If RESET# is asserted during a program or erase
operation, the RY/BY# pin remains a “0” (busy) until
the internal reset operation is completed, which
requires a time of tREADY (during Embedded Algo-
rithms). The system can thus monitor RY/BY# to
determine whether the reset operation is completed.
If RESET# is asserted when a program or erase
operation is not executing (RY/BY# pin is “1”), the
reset operation is completed within a time of tREADY
(not during Embedded Algorithms). The system can
read data after the RESET# pin returns to VIH, which
requires a time of tRH.
RESET# tied to the System Reset
The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the
Flash memory, enabling the system to read the boot-
up firmware from the Flash memory.Refer to the AC
Characteristics tables for RESET# parameters and
to Fig. 17 for the timing diagram.
SECTOR PROTECTION
The ES29LV400 features hardware sector protec-
tion. In the device, sector protection is performed on
the sector previously defined in the Table 3-4. Once
after a sector is protected, any program or erase
operation is not allowed in the protected sector. The
previously protected sectors must be unprotected by
one of the unprotect methods provided here before
changing data in those sectors.
Sector protection can be implemented via two
methods.
- In-system protection
- A9 High-voltage protection
To check whether the sector protection was suc-
cessfully executed or not, another operation called
“protect verification” needs to be performed after
the protection operation on a sector. All protection
and protect verifications provided in the device are
summarized in detail at the Table 1.
In-System Protection
“In-system
protection”,
the
primary
method,
requires VID (11.5V~12.5V) on the RESET# with
A6=0, A1=1, and A0=0. This method can be imple-
mented either in-system or via programming equip-
ment. This method uses standard microprocessor
bus cycle timing. Refer to Fig. 26 for timing diagram
and Fig. 2 for the protection algorithm.
A9 High-Voltage Protection
“High-voltage protection”, the alternate method
intended only for programming equipment, must
force VID (11.5~12.5V) on address pin A9 and con-
trol pin OE# with A6=0, A1=1 and A0=0. Refer to
Fig. 28 for timing diagram and Fig. 4 for the protec-
tion algorithm.
SECTOR UNPROTECTION
The previously protected sectors must be unpro-
tected before modifying any data in the sectors.
The sector unprotection algorithm unprotects all
sectors in parallel. All unprotected sectors must first
be protected prior to the first sector unprotection
write cycle to avoid any over-erase due to the intrin-
sic erase characteristics of the protection cell. After
the unprotection operation, all previously protected
sectors will need to be individually re-protected.
Standard microprocessor bus cycle timings are
used in the unprotection and unprotect verification
operations. Three unprotect methods are provided
in the ES29LV400 device. All unprotection and
unprotect verification cycles are summarized in
detail at the Table 1.
- In-system unprotection
- A9 High-voltage unprotection
- Temporary sector unprotection
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相关代理商/技术参数 |
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|---|---|
| ES29BDS160FT-70WC | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS160FT-80TG | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS160FT-90RTG | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS320D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| ES29BDS320D-12RTG | 制造商:EXCELSEMI 制造商全称:EXCELSEMI 功能描述:32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
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