参数资料
型号: ES29BDS320ET-90RTGI
厂商: 优先(苏州)半导体有限公司
英文描述: 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述: 的4Mb(512Kx 8/256K × 16),3.0伏的CMOS只,引导扇区闪存
文件页数: 19/51页
文件大小: 697K
代理商: ES29BDS320ET-90RTGI
ES I
26
Rev.0B January 5, 2006
ES29LV400E
Excel Semiconductor inc.
DC CHARACTERISTICS
Table 7. CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
ILI
Input Load Current
VIN=Vss to Vcc
Vcc=Vcc max
+ 1.0
uA
ILIT
A9 Input Load Current
Vcc=Vcc max; A9=12.5V
35
uA
ILR
RESET# Input Load Current
Vcc=Vcc max; RESET#=12.5V
35
uA
ILO
Output Leakage Current
Vout=Vss to Vcc,
Vcc=Vcc max
+ 1.0
uA
ICCI
Vcc Active Read Current
(Notes 1,2)
CE#=VIL OE#=VIH, Byte
mode
5MHz
7
12
mA
1MHz
2
4
CE#=VIL, OE#=VIH, Word
mode
5MHz
7
12
1MHz
2
4
ICC2
Vcc Active Write Current (Note 2,3)
CE#=VIL, OE#=VIH, WE#=VIL
15
30
mA
ICC3
Vcc Standby Current (Note 2)
CE#, RESET#= Vcc+0.3V
0.2
10
uA
ICC4
Vcc Reset Current (Note 2)
RESET#=Vss + 0.3V
0.2
10
uA
ICC5
Automatic Sleep Mode
(Notes2,4)
VIH = Vcc + 0.3V
VIL = Vss + 0.3V
0.2
10
uA
VIL
Input Low Voltage
-0.5
0.5
V
VIH
Input High Voltage
0.7xVcc
Vcc+0.3
V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
Vcc = 3.0V + 10%
11.5
12.5
V
VOL
Output Low Voltage
IOL = 4.0 mA, Vcc = Vcc min
0.45
V
VOH1
Output High Voltage
IOH = -2.0mA, Vcc = Vcc min
0.85 Vcc
V
VOH2
IOH = -100 uA, Vcc = Vcc min
Vcc - 0.4
VLKO
Low Vcc Lock-Out Voltage (Note 5)
2.3
2.5
V
Notes:
1. The Icc current listed is typically less than 2 mA/MHz, with OE# at VIH , Typical condition : 25
oC, Vcc = 3V
2. Maximum ICC specifications are tested with Vcc = Vcc max.
3. Icc active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30ns. Typical sleep mode current is
200 nA.
5. Not 100% tested.
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