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参数资料
| 型号： | ESD1014MUTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/3页 |
| 文件大小： | 0K |
| 描述： | IC TVS ARRAY LOW CAP 10UDFN |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 3.3V |
| 电压 - 击穿： | 5V |
| 功率（瓦特）： | 450W |
| 电极标记： | 4 通道阵列 - 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-UFDFN 裸露焊盘 |
| 供应商设备封装： | 10-uDFN（2.6x2.6） |
| 包装： | 标准包装 |
| 其它名称： | ESD1014MUTAGOSDKR |
ESD1014
ELECTRICAL CHARACTERISTICS (T A =25 ° C unless otherwise specified)
Parameter
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Junction Capacitance
Junction Capacitance
Symbol
V RWM
V BR
I R
V C
V C
V C
V C
I PP
C J
C J
Conditions
(Note 1)
I T =1 mA, (Note 2)
V RWM = 3.3 V
I PP = 1 A, pin 5 to GND
I PP = 1 A
I PP = 10 A
I PP = 25 A
8x20 m s Waveform
V R = 0 V, f=1 MHz between I/O Pins and GND
V R = 0 V, f=1 MHz between I/O Pins
Min
5.0
Typ
5.3
3.8
1.5
Max
3.3
5.0
6.2
7.5
9.0
11
30
5.0
3.0
Unit
V
V
m A
V
V
V
V
A
pF
pF
1. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal or greater than the DC
or continuous peak operating voltage level.
2. V BR is measured at pulse test current I T .
TYPICAL PERFORMANCE CURVES
(T J = 25 ° C unless otherwise noted)
100
90
80
70
60
50
40
30
20
10
100
90
80
70
60
50
40
30
20
10
t r
t P
PEAK VALUE I RSM @ 8 m s
PULSE WIDTH (t P ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 m s
HALF VALUE I RSM /2 @ 20 m s
0
0
25
50
75
100
125
150
175
200
0
0
20
40
60
80
T A , AMBIENT TEMPERATURE ( ° C)
Figure 1. Pulse Derating Curve
http://onsemi.com
2
t, TIME ( m s)
Figure 2. 8 × 20 m s Pulse Waveform
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