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| 型号： | ESD9P5.0ST5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/4页 |
| 文件大小： | 0K |
| 描述： | TVS UNIDIR 150MW 5.0V SOD-923 |
| 产品变化通告： | Wire Bond Change 01/Dec/2010 |
| 产品目录绘图： | ESD9 Series Schematic |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 5.8V |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-923 |
| 供应商设备封装： | SOD-923 |
| 包装： | 标准包装 |
| 其它名称： | ESD9P5.0ST5GOSDKR |
ESD9P5.0ST5G
IEC 61000 ? 4 ? 2 Spec.
Test First Peak
Voltage Current
Level (kV) (A)
Current at
30 ns (A)
Current at
60 ns (A)
I peak
100%
90%
IEC61000 ? 4 ? 2 Waveform
1
2
7.5
4
2
2
3
4
4
6
8
15
22.5
30
8
12
16
4
6
8
I @ 30 ns
I @ 60 ns
10%
t P = 0.7 ns to 1 ns
Figure 3. IEC61000 ? 4 ? 2 Spec
ESD Gun
TVS
Oscilloscope
50 W
50 W
Cable
Figure 4. Diagram of ESD Test Setup
The following is taken from Application Note
AND8308/D ? Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000 ? 4 ? 2 waveform. Since the
IEC61000 ? 4 ? 2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
100
90
80
70
60
50
40
30
20
10
t r
t P
PEAK VALUE I RSM @ 8 m s
PULSE WIDTH (t P ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 m s
HALF VALUE I RSM /2 @ 20 m s
0
0
20
40
60
80
t, TIME ( m s)
Figure 5. 8 X 20 m s Pulse Waveform
http://onsemi.com
3
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相关代理商/技术参数 |
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|---|---|
| ESD9R3.3ST5G | 功能描述:TVS 二极管 - 瞬态电压抑制器 ESD PROT UNI SOD923 RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| ESD9R3.3ST5G | 制造商:ON Semiconductor 功能描述:TVS-DIODE 150mW 7.8V SOD-923 制造商:ON Semiconductor 功能描述:TVS-DIODE, 150mW, 7.8V, SOD-923 |
| ESD9X/BX.ST5G | 制造商:ON 功能描述:ESD Protection Diode, SOD-923 |
| ESD9X12ST5G | 功能描述:TVS 二极管 - 瞬态电压抑制器 SOD-923 ESD PROT RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| ESD9X3.33ST5G | 制造商:ON Semiconductor 功能描述: |
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